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Optical and electrical investigation of low dimensional self-assembled InAs quantum dot field effect transistors 会议论文
International Journal of Nanoscience丛书标题: International Journal of Nanoscience Series, Beijing, PEOPLES R CHINA, NOV 24-27, 2004
作者:  Zeng, YX (Zeng, Yuxin);  Liu, W (Liu, Wei);  Yang, FH (Yang, Fuhua);  Xu, P (Xu, Ping);  Tan, PH (Tan, Pingheng);  Zheng, HZ (Zheng, Houzhi);  Zeng, YP (Zeng, Yiping);  Xing, YJ (Xing, Yingjie);  Yu, DP (Yu, Dapeng);  Zeng, YX, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
Adobe PDF(561Kb)  |  收藏  |  浏览/下载：1484/264  |  提交时间：2010/03/29
Inas Quantum Dot  Photoluminescence  Modulation-doped  Field Effect Transistor  Mu-m  Capping Layer  
无权访问的条目 期刊论文
作者:  Zhang H;  Zheng HZ;  Xu P;  Peng HL;  Tan PH;  Yang FH;  Ni HQ;  Zeng YX;  Gan HD;  Zhu H;  Zhang, H, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: zhanghao@red.semi.ac.cn
Adobe PDF(237Kb)  |  收藏  |  浏览/下载：950/277  |  提交时间：2010/03/17
无权访问的条目 期刊论文
作者:  Bian SB;  Tang Y;  Li GR;  Li YX;  Yang FH;  Zheng HZ;  Zeng YP;  Bian SB,Chinese Acad Sci,Inst Semicond,State Key Lab Superlattices & Microstruct,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(435Kb)  |  收藏  |  浏览/下载：965/304  |  提交时间：2010/08/12