Kinetic Monte Carlo simulation of semiconductor quantum dot growth

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Kinetic Monte Carlo simulation of semiconductor quantum dot growth
	Zhao C; Chen YH; Sun J; Lei W; Cui CX; Yu LK; Li K; Wang ZG; Zhao, C, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
	2007
会议名称	China International Conference on Nanoscience and Technology (ChinaNANO 2005)
会议录名称	Nanoscience and Technology丛书标题: SOLID STATE PHENOMENA
页码	Pts 1 and 2 121-123: 1073-1076 Part 1-2
会议日期	JUN 09-11, 2005
会议地点	Beijing, PEOPLES R CHINA
出版地	LAUBLSRUTISTR 24, CH-8717 STAFA-ZURICH, SWITZERLAND
出版者	TRANS TECH PUBLICATIONS LTD
ISSN	1012-0394
ISBN	978-3-908451-30-3
部门归属	chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china
摘要	Performing an event-based continuous kinetic Monte Carlo (KMC) simulation, We investigate the growth conditions which are important to form semiconductor quantum dot (QD) in molecular beam epitaxy (MBE) system. The simulation results provide a detailed characterization of the atomic kinetic effects. The KMC simulation is also used to explore the effects of periodic strain to the epitaxy growth of QD. The simulation results are in well qualitative agreement with experiments.
关键词	Monte Carlo Simulation
学科领域	半导体材料
主办者	Natl Ctr Nanosci & Technol.; Natl Steering Comm Nanotechnol.
收录类别	其他
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/9798
专题	中国科学院半导体研究所（2009年前）
通讯作者	Zhao, C, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
推荐引用方式 GB/T 7714	Zhao C,Chen YH,Sun J,et al. Kinetic Monte Carlo simulation of semiconductor quantum dot growth[C]. LAUBLSRUTISTR 24, CH-8717 STAFA-ZURICH, SWITZERLAND:TRANS TECH PUBLICATIONS LTD,2007:Pts 1 and 2 121-123: 1073-1076 Part 1-2.

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