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Light extraction efficiency improvement and strain relaxation in InGaN/GaN multiple quantum well nanopillars 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 8, 页码: Article no.84339
Authors:  Zhu JH;  Wang LJ;  Zhang SM;  Wang H;  Zhao DG;  Zhu JJ;  Liu ZS;  Jiang DS;  Yang H;  Zhang, SM, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. smzhang@red.semi.ac.cn
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The investigation on strain relaxation and double peaks in photoluminescence of InGaN/GaN MQW layers 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2009, 卷号: 42, 期号: 23, 页码: Art.No.235104
Authors:  Zhu, JH (Zhu, J. H.);  Wang, LJ (Wang, L. J.);  Zhang, SM (Zhang, S. M.);  Wang, H (Wang, H.);  Zhao, DG (Zhao, D. G.);  Zhu, JJ (Zhu, J. J.);  Liu, ZS (Liu, Z. S.);  Jiang, DS (Jiang, D. S.);  Qiu, YX (Qiu, Y. X.);  Yang, H (Yang, H.);  Zhu, JH, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: smzhang@red.semi.ac.cn
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Multiple-quantum Wells  
InP Based PD/EAM Integrated Photonic Switch 期刊论文
CHINESE PHYSICS LETTERS, 2009, 卷号: 26, 期号: 10, 页码: Art.No.104208
Authors:  Zhang YX (Zhang Yun-Xiao);  Liao ZY (Liao Zai-Yi);  Pan JQ (Pan Jiao-Qing);  Zhou F (Zhou Fan);  Zhu HL (Zhu Hong-Liang);  Zhao LJ (Zhao Ling-Juan);  Wang W (Wang Wei);  Zhang, YX, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: zhangyx@semi.ac.cn
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Traveling-carrier Photodiodes  
Curvature Correction of FWHM in the X-Ray Rocking Curve of Bent Heteroepitaxial Films 期刊论文
CHINESE PHYSICS LETTERS, 2009, 卷号: 26, 期号: 7, 页码: Art. No. 076104
Authors:  Wang LJ;  Zhang SM;  Wang YT;  Jiang DS;  Zhu JJ;  Zhao DG;  Liu ZS;  Wang H;  Shi YS;  Liu SY;  Yang H;  Zhang SM Chinese Acad Sci State Key Lab Integrated Optoelect Inst Semicond POB 912 Beijing 100083 Peoples R China. E-mail Address: smzhang@red.semi.ac.cn
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Densities  Crystals  Layers  
Superluminescent diode monolithically integrated with novel Y-branch by bundle integrated waveguide for fiber optic gyroscope - art. no. 68380D 会议论文
OPTOELECTRONIC DEVICES AND INTEGRATION II, Beijing, PEOPLES R CHINA, NOV 12-15, 2007
Authors:  Wang, L;  Zhao, LJ;  Chen, WX;  Pan, JQ;  Zhou, F;  Zhu, HL;  Wang, W;  Wang, L, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.
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Photonic Integrated Circuit  Y-branch  Superluminescent Diode  Bundle Integrated Guide  Far Field Pattern  Reactive Ion Etching  
A novel butt-joint scheme for the preparation of electro-absorptive lasers 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2008, 卷号: 41, 期号: 3, 页码: Art. No. 035108
Authors:  Cheng YB;  Pan JQ;  Zhou F;  Feng W;  Wang BJ;  Zhu HL;  Zhao LJ;  Wang W;  Cheng, YB, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: ybcheng@semi.ac.cn
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Integrated Dfb Laser  
Wavelength tunable distributed Bragg reflector laser integrated with electro-absorption modulator by a combined method of selective area growth and quantum well intermixing - art. no. 68240N 会议论文
SEMICONDUCTOR LASERS AND APPLICATIONS III, Beijing, PEOPLES R CHINA, NOV 12-13, 2007
Authors:  Zhao LJ;  Zhang J;  Wang L;  Cheng YB;  Pan JQ;  Liu HB;  Zhu HL;  Zhou F;  Bian J;  Wang BJ;  Zhu NH;  Wei W;  Zhao, LJ, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.
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Tunable Lasers  
Fabrication of InGaAlAs MQW buried heterostructure lasers by narrow stripe selective MOVPE 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2007, 卷号: 40, 期号: 2, 页码: 361-365
Authors:  Feng W;  Pan JQ;  Wang LF;  Bian J;  Wang BJ;  Zhou F;  An X;  Zhao LJ;  Zhu HL;  Wang W;  Feng, W, Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: wfeng@semi.ac.cn
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Bandgap Energy Control  
Selective growth of absorptive InGaAsP layer on InP corrugation for a buried grating structure 期刊论文
APPLIED PHYSICS LETTERS, 2007, 卷号: 90, 期号: 1, 页码: Art.No.011117
Authors:  Feng W;  Pan JQ;  Cheng YB;  Liao ZY;  Wang BJ;  Zhou F;  Zhao LJ;  Zhu HL;  Wang W;  Feng, W, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: wfeng@semi.ac.cn
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Vapor-phase Epitaxy  
High-power electroabsorption modulator using intrastep quantum well 期刊论文
CHINESE PHYSICS LETTERS, 2007, 卷号: 24, 期号: 7, 页码: 2128-2130
Authors:  Cheng YB (Cheng Yuan-Bing);  Pan JQ (Pan Jiao-Qing);  Zhou F (Zhou Fan);  Zhu HL (Zhu Hong-Liang);  Zhao LJ (Zhao Ling-Juan);  Wang W (Wang Wei);  Cheng, YB, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: ybcheng@semi.ac.cn
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Saturation