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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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Optical and electrical investigation of low dimensional self-assembled InAs quantum dot field effect transistors
会议论文
International Journal of Nanoscience丛书标题: International Journal of Nanoscience Series, Beijing, PEOPLES R CHINA, NOV 24-27, 2004
作者:
Zeng, YX (Zeng, Yuxin)
;
Liu, W (Liu, Wei)
;
Yang, FH (Yang, Fuhua)
;
Xu, P (Xu, Ping)
;
Tan, PH (Tan, Pingheng)
;
Zheng, HZ (Zheng, Houzhi)
;
Zeng, YP (Zeng, Yiping)
;
Xing, YJ (Xing, Yingjie)
;
Yu, DP (Yu, Dapeng)
;
Zeng, YX, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
Adobe PDF(561Kb)
  |  
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  |  
浏览/下载:1723/264
  |  
提交时间:2010/03/29
Inas Quantum Dot
Photoluminescence
Modulation-doped
Field Effect Transistor
Mu-m
Capping Layer
Tuning of emission wavelength of InAs/GaAs quantum dots sandwiched by combination layers
会议论文
International Journal of Nanoscience丛书标题: International Journal of Nanoscience Series, Beijing, PEOPLES R CHINA, NOV 24-27, 2004
作者:
Fang, ZD (Fang, Zhidan)
;
Gong, M (Gong, Meng)
;
Miao, ZH (Miao, Zhenhua)
;
Niu, ZC (Niu, Zhichuan)
;
Fang, ZD, Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
Adobe PDF(431Kb)
  |  
收藏
  |  
浏览/下载:1784/334
  |  
提交时间:2010/03/29
Quantum Dots
Photoluminescence
Combination Layer
1.3 Mu-m
Lasers
Inalas
Effect of SiO2 encapsulation on the nitrogen reorganization in GaNAs/GaAs single quantum well
会议论文
APOC 2003:ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS; MATERIALS, ACTIVE DEVICES, AND OPTICAL AMPLIFIERS, PTS 1 AND 2, 5280, Wuhan, PEOPLES R CHINA, NOV 04-06, 2003
作者:
Ying-Qiang X
;
Zhang W
;
Niu ZC
;
Wu RG
;
Wang QM
;
Ying-Qiang X Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(75Kb)
  |  
收藏
  |  
浏览/下载:1732/495
  |  
提交时间:2010/10/29
Ganas
Sio2 Encapsulation
Rapid-thermal-annealing
Nitrogen Reorganization
Molecular-beam Epitaxy
Optical-properties
Mu-m
Selective intermixing of Ga(In)NAs/GaAs quantum well structures usingSiO(2) encapsulation and rapid thermal annealing
会议论文
APOC 2001: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS: OPTOELECTRONICS, MATERIALS, AND DEVICES FOR COMMUNICATIONS, 4580, BEIJING, PEOPLES R CHINA, NOV 12-15, 2001
作者:
Xu YQ
;
Li LH
;
Pan Z
;
Lin YW
;
Wang QM
;
Xu YQ Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(157Kb)
  |  
收藏
  |  
浏览/下载:1267/221
  |  
提交时间:2010/10/29
Molecular-beam Epitaxy
Mu-m
Photoluminescence characterization of 1.3 mu m In(Ga)As/GaAs islands grown by molecular beam epitaxy
会议论文
PROCEEDINGS OF THE 10TH INTERNATIONAL CONFERENCE ON NARROW GAP SEMICONDUCTORS AND RELATED SMALL ENERGY PHENOMENA, PHYSICS AND APPLICATIONS, 2, KANAZAWA, JAPAN, MAY 27-31, 2001
作者:
Niu ZC
;
Wang XD
;
Miao ZH
;
Lan Q
;
Kong YC
;
Zhou DY
;
Feng SL
;
Niu ZC Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
收藏
  |  
浏览/下载:1404/0
  |  
提交时间:2010/10/29
Molecular Beam Epitaxy
Ingaas Islands
Photolumineseence
Line-width
1.3 Mu-m
Inas/gaas Quantum Dots
Optical-properties
Cap Layer
Gaas
Luminescence
Strain
Modification of emission wavelength of self-assembled In(Ga)As/GaAs quantum dots covered by InxGa1-xAs(0 <= x <= 0.3) layer
会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:
Niu ZC
;
Wang XD
;
Miao ZH
;
Feng SL
;
Niu ZC Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct Beijing 100083 Peoples R China.
Adobe PDF(171Kb)
  |  
收藏
  |  
浏览/下载:1307/221
  |  
提交时间:2010/11/15
Crystal Morphology
Quantum Dots
Molecular Beam Epitaxy
Semiconducting Gallium Arsenide
Semiconducting Indium Gallium Arsenide
1.35 Mu-m
Gaas-surfaces
Photoluminescence
Islands
Characteristics of circular waveguide photodetectors using SiGe/Si multiple quantum wells
会议论文
OPTICAL MATERIALS, 14 (3), BEIJING, PEOPLES R CHINA, JUN 13-18, 1999
作者:
Li C
;
Yang QQ
;
Wang HJ
;
Cheng BW
;
Yu JZ
;
Wang QM
;
Li C Chinese Acad Sci Inst Semicond Natl Integrated Optoelect Lab POB 912 Beijing 100083 Peoples R China.
Adobe PDF(403Kb)
  |  
收藏
  |  
浏览/下载:1257/232
  |  
提交时间:2010/11/15
Circular Waveguide Photodetector
Responsivity
Quantum Efficiency
Sige/si Mqw
1.3 Mu-m
Investigation on integrated high speed DFB light source and narrow bandwidth RCE photodetector for WDM fiber communication network application
会议论文
ADVANCED PHOTONIC SENSORS: TECHNOLOGY AND APPLICATIONS, 4220, BEIJING, PEOPLES R CHINA, NOV 08-10, 2000
作者:
Wang QM
;
Li C
;
Pan Z
;
Luo Y
;
Wang QM Chinese Acad Sci Inst Semicond State Key Join Lab Integrates Optoelect Beijing 100083 Peoples R China.
Adobe PDF(442Kb)
  |  
收藏
  |  
浏览/下载:1371/194
  |  
提交时间:2010/10/29
Gain-coupling Dfb Laser
Ea Modulator
Rce Photodetector
Monolithic Integration
Mu-m
Laser
Normal-incident SiGe/Si MQWs photodetectors operating at 1.3 mu m
会议论文
PHOTONICS TECHNOLOGY INTO THE 21ST CENTURY: SEMICONDUCTORS, MICROSTRUCTURES, AND NANOSTRUCTURES, 3899, SINGAPORE, SINGAPORE, DEC 01-03, 1999
作者:
Cheng BW
;
Li C
;
Yang QQ
;
Wang HJ
;
Luo LP
;
Yu JZ
;
Wang QM
;
Cheng BW Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(176Kb)
  |  
收藏
  |  
浏览/下载:1273/229
  |  
提交时间:2010/10/29
Sige/si
Mqws
Photodetector
1.3 Mu-m
Si/sio2
1.3 mu m InGaAsP/InP strained layer multi-quantum-well complex-coupled distributed feedback laser
会议论文
SEMICONDUCTOR LASERS III, 3547, BEIJING, PEOPLES R CHINA, SEP 16-18, 1998
作者:
Chen B
;
Wang W
;
Wang XJ
;
Zhang JY
;
Zhu HL
;
Zhou F
;
Chen B Chinese Acad Sci Inst Semicond Natl Res Ctr Optoelect Technol POB 912 Beijing 100083 Peoples R China.
Adobe PDF(162Kb)
  |  
收藏
  |  
浏览/下载:1346/248
  |  
提交时间:2010/10/29
1.3 Mu m
Complex-coupled Grating
Dfb Laser