Characteristics of circular waveguide photodetectors using SiGe/Si multiple quantum wells

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Characteristics of circular waveguide photodetectors using SiGe/Si multiple quantum wells
	Li C; Yang QQ; Wang HJ; Cheng BW; Yu JZ; Wang QM; Li C Chinese Acad Sci Inst Semicond Natl Integrated Optoelect Lab POB 912 Beijing 100083 Peoples R China.
	2000
会议名称	International-Union-of-Materials-Research-Societies International Conference on Advanced Materials (IUMRS-ICAM 99)
会议录名称	OPTICAL MATERIALS, 14 (3)
页码	267-269
会议日期	JUN 13-18, 1999
会议地点	BEIJING, PEOPLES R CHINA
出版地	PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
出版者	ELSEVIER SCIENCE BV
ISSN	0925-3467
部门归属	chinese acad sci, inst semicond, natl integrated optoelect lab, beijing 100083, peoples r china
摘要	We report on the fabrication of circular waveguide photodetectors with a response near 1.3 mu m wavelength using SiGe/Si multiple quantum wells. The quantum efficiency of the circular waveguide photodetector is improved when compared with that of the rib waveguide photodetector in the same wavelength at 1.3 mu m The frequency response of the photodetectors is simulated. The emciency-bandwidth product of the circular waveguide photodetectors is improved correspondingly. (C) 2000 Published by Elsevier Science B.V. All rights reserved.
关键词	Circular Waveguide Photodetector Responsivity Quantum Efficiency Sige/si Mqw 1.3 Mu-m
学科领域	半导体材料
主办者	Int Union Mat Res Soc.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/14993
专题	中国科学院半导体研究所（2009年前）
通讯作者	Li C Chinese Acad Sci Inst Semicond Natl Integrated Optoelect Lab POB 912 Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Li C,Yang QQ,Wang HJ,et al. Characteristics of circular waveguide photodetectors using SiGe/Si multiple quantum wells[C]. PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS:ELSEVIER SCIENCE BV,2000:267-269.

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