Normal-incident SiGe/Si MQWs photodetectors operating at 1.3 mu m

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Normal-incident SiGe/Si MQWs photodetectors operating at 1.3 mu m
	Cheng BW; Li C; Yang QQ; Wang HJ; Luo LP; Yu JZ; Wang QM; Cheng BW Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
	1999
会议名称	SPIE Conference on Photonics Technology into the 21st Century - Semiconductors, Microstructures, and Nanostructures
会议录名称	PHOTONICS TECHNOLOGY INTO THE 21ST CENTURY: SEMICONDUCTORS, MICROSTRUCTURES, AND NANOSTRUCTURES, 3899
页码	326-329
会议日期	DEC 01-03, 1999
会议地点	SINGAPORE, SINGAPORE
出版地	1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
出版者	SPIE-INT SOC OPTICAL ENGINEERING
ISSN	0277-786X
ISBN	0-8194-3501-5
部门归属	chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china
摘要	A normal-incident SiGe/Si multiple quantum wells (MQWs) photodetector was reported. The structure and fabrication process of the photodetector were introduced. The photocurrent spectra measurement showed that the response spectra was expanded to 1.3 mu m wavelength. The quantum efficiency of the photodetector was 0.1% at 1.3 mu m and 20% at 0.95 mu m.
关键词	Sige/si Mqws Photodetector 1.3 Mu-m Si/sio2
学科领域	光电子学
主办者	SPIE.; Nanyang Technol Univ.; SPIE, Singapore Chapter.; Inst Phys.; USAF, Asian Off Aerosp Res & Dev.; USA, Res Off Far E.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/13759
专题	中国科学院半导体研究所（2009年前）
通讯作者	Cheng BW Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Cheng BW,Li C,Yang QQ,et al. Normal-incident SiGe/Si MQWs photodetectors operating at 1.3 mu m[C]. 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA:SPIE-INT SOC OPTICAL ENGINEERING,1999:326-329.

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