Modification of emission wavelength of self-assembled In(Ga)As/GaAs quantum dots covered by InxGa1-xAs(0 <= x <= 0.3) layer

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Modification of emission wavelength of self-assembled In(Ga)As/GaAs quantum dots covered by InxGa1-xAs(0 <= x <= 0.3) layer
	Niu ZC; Wang XD; Miao ZH; Feng SL; Niu ZC Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct Beijing 100083 Peoples R China.
	2001
会议名称	11th International Conference on Molecular Beam Epitaxy (MBE-XI)
会议录名称	JOURNAL OF CRYSTAL GROWTH, 227
页码	1062-1068
会议日期	SEP 11-15, 2000
会议地点	BEIJING, PEOPLES R CHINA
出版地	PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
出版者	ELSEVIER SCIENCE BV
ISSN	0022-0248
部门归属	chinese acad sci, inst semicond, natl lab superlattices & microstruct, beijing 100083, peoples r china
摘要	Red shifts of emission wavelength of self-organized In(Cla)As/GaAs quantum dots (QDs) covered by 3 nm thick InxGa1-xAs layer with three different In mole fractions (x = 0.1, 0.2 and 0.3, respectively) have been observed. Transmission electron microscopy images demonstrate that the stress along growth direction in the InAs dots was reduced due to introducing the InxGa1-xAs (x = 0.1, 0.2 and 0.3) covering layer instead of GaAs layer. Atomic force microscopy pictures show a smoother surface of InAs islands covered by an In0.2Ga0.8As layer. It is explained by the calculations that the redshifts of the photoluminescence (PL) spectra from the QDs covered by the InxGa1-xAs (x greater than or equal to 0.1) layers were mainly due to the reducing of the strain other than the InAs/GaAs intermixing in the InAs QDs. The temperature dependent PL spectra further confirm that the InGaAs covering layer can effectively suppress the temperature sensitivity of PL emissions. 1.3 mum emission wavelength with a very narrow linewidth of 19.2 mcV at room temperature has been obtained successfully from In,In0.5Ga0.5As/GaAs self-assembled QDs covered by a 3-nm In0.2Ga0.2As strain reducing layer. (C) 2001 Elsevier Science B.V. All rights reserved.
关键词	Crystal Morphology Quantum Dots Molecular Beam Epitaxy Semiconducting Gallium Arsenide Semiconducting Indium Gallium Arsenide 1.35 Mu-m Gaas-surfaces Photoluminescence Islands
学科领域	半导体物理
主办者	China Natl Nat Sci Fdn.; Inst Semiconductor, CAS.; Inst Phys, CAS.; State Key Lab Funct Mat Informat.; Inst Met, CAS.; Hong Kong Univ Sci & Technol.; Univ Hong Kong, Lab New Mat.; Chinese Acad Sci, Lab New Mat.; VG Semicon.; Riber.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/14955
专题	中国科学院半导体研究所（2009年前）
通讯作者	Niu ZC Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Niu ZC,Wang XD,Miao ZH,et al. Modification of emission wavelength of self-assembled In(Ga)As/GaAs quantum dots covered by InxGa1-xAs(0 <= x <= 0.3) layer[C]. PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS:ELSEVIER SCIENCE BV,2001:1062-1068.

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