Tuning of emission wavelength of InAs/GaAs quantum dots sandwiched by combination layers
Fang, ZD (Fang, Zhidan); Gong, M (Gong, Meng); Miao, ZH (Miao, Zhenhua); Niu, ZC (Niu, Zhichuan); Fang, ZD, Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
2006
会议名称2nd Asian Conference on Nanoscience and Nanotechnology
会议录名称International Journal of Nanoscience丛书标题: International Journal of Nanoscience Series
页码Vol 5 No 6 5 (6): 847-852
会议日期NOV 24-27, 2004
会议地点Beijing, PEOPLES R CHINA
出版地PO BOX 128 FARRER RD, SINGAPORE 9128, SINGAPORE
出版者WORLD SCIENTIFIC PUBL CO PTE LTD
部门归属chinese acad sci, inst semicond, natl lab superlattices & microstruct, beijing 100083, peoples r china
摘要We investigate about controlling of photoluminescence (PL) wavelengths of InAs/GaAs self-assembled quantum dots (QDs) sandwiched with combination strained-buffer layer (CSBL) and combination strained-reducing layer (CSRL). The emission peak position of QDs is red-shifted to 1.37 mu m. The density of the QDs is increased to 1.17x10(10) cm(-2). It is indicated that optical properties of QDs could be improved by optimizing of the buffer and covering layers for the QDs. These results may provide a new way to further developing GaAs-based 1.3 mu m light sources.
关键词Quantum Dots Photoluminescence Combination Layer 1.3 Mu-m Lasers Inalas
学科领域半导体物理
收录类别CPCI-S
语种英语
文献类型会议论文
条目标识符http://ir.semi.ac.cn/handle/172111/9818
专题中国科学院半导体研究所(2009年前)
通讯作者Fang, ZD, Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
推荐引用方式
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Fang, ZD ,Gong, M ,Miao, ZH ,et al. Tuning of emission wavelength of InAs/GaAs quantum dots sandwiched by combination layers[C]. PO BOX 128 FARRER RD, SINGAPORE 9128, SINGAPORE:WORLD SCIENTIFIC PUBL CO PTE LTD,2006:Vol 5 No 6 5 (6): 847-852.
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