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Research on SOI-based micro-resonator devices 会议论文
Proceedings of SPIE-The International Society for Optical Engineering vol.7847, Beijing, PEOPLES R CHINA, OCT 18-20, 2010
作者:  Xiao X (Xiao Xi);  Xu HH (Xu Haihua);  Hu YT (Hu Yingtao);  Zhou LA (Zhou Liang);  Xiong K (Xiong Kang);  Li ZY (Li Zhiyong);  Li YT (Li Yuntao);  Fan ZC (Fan Zhongchao);  Han WH (Han Weihua);  Yu YD (Yu Yude);  Yu JZ (Yu Jinzhong)
Adobe PDF(8983Kb)  |  收藏  |  浏览/下载：1765/354  |  提交时间：2011/07/14
Anomalous temperature-dependent bimodal size evolution of InAs quantum dots on vicinal GaAs(100) substrates 会议论文
Proceedings of International Symposium on Biophotonics Nanophotonics and Metamaterials, Hangzhou, PEOPLES R CHINA, OCT 16-18, 2006
作者:  Liang S;  Zhu HL;  Zhou JT;  Cheng YB;  Pan JQ;  Zhao LJ;  Wang W;  Liang, S, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
Adobe PDF(245Kb)  |  收藏  |  浏览/下载：1191/227  |  提交时间：2010/03/29
Chemical-vapor-deposition  
Preparation and AFM characterization of self-ordered porous alumina films on semi-insulated gaas substrate 会议论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, Beijing, PEOPLES R CHINA, SEP 13-19, 2005
作者:  Zhou HY;  Qu SC;  Wang ZG;  Liang LY;  Cheng BC;  Liu JP;  Peng WQ;  Zhou, HY, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: zhouhy@mail.semi.ac.cn
Adobe PDF(164Kb)  |  收藏  |  浏览/下载：1981/369  |  提交时间：2010/03/29
Anodic Alumina Films  
Influence of substrate orientation on In0.5Ga0.5As/GaAs quantum dots grown by molecular beam epitaxy 会议论文
PHYSICA E, 8 (2), BEIJING, PEOPLES R CHINA, JUN 13-18, 1999
作者:  Jiang WH;  Xu HZ;  Xu B;  Ye XL;  Zhou W;  Ding D;  Liang JB;  Wang ZG;  Jiang WH Chinese Acad Sci Inst Semicond Inst Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(320Kb)  |  收藏  |  浏览/下载：1373/285  |  提交时间：2010/11/15
Quantum Dots  High Index  Molecular Beam Epitaxy  Photoluminescence  Surface Segregation  Oriented Gaas  Ingaas  Islands  Wells  Disks  
Photoluminescence study on coarsening of self-assembled InAlAs quantum dots on GaAs (001) 会议论文
JOURNAL OF ELECTRONIC MATERIALS, 28 (5), CHARLOTTESVILLE, VIRGINIA, JUN 24-26, 1998
作者:  Zhou W;  Xu B;  Xu HZ;  Liu FQ;  Liang JB;  Wang ZG;  Zhu ZZ;  Li GH;  Zhou W Chinese Acad Sci Lab Semicond Mat Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(214Kb)  |  收藏  |  浏览/下载：1461/231  |  提交时间：2010/11/15
Bimodal Distribution  Photoluminescence (Pl)  Quantum-size Effect  Ge  Ensembles  Si(100)  Growth  Shape