Photoluminescence study on coarsening of self-assembled InAlAs quantum dots on GaAs (001)

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Photoluminescence study on coarsening of self-assembled InAlAs quantum dots on GaAs (001)
	Zhou W; Xu B; Xu HZ; Liu FQ; Liang JB; Wang ZG; Zhu ZZ; Li GH; Zhou W Chinese Acad Sci Lab Semicond Mat Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
	1999
会议名称	40th Electronic Materials Conference (EMC-40)
会议录名称	JOURNAL OF ELECTRONIC MATERIALS, 28 (5)
页码	528-531
会议日期	JUN 24-26, 1998
会议地点	CHARLOTTESVILLE, VIRGINIA
出版地	420 COMMONWEALTH DR, WARRENDALE, PA 15086 USA
出版者	MINERALS METALS MATERIALS SOC
ISSN	0361-5235
部门归属	chinese acad sci, lab semicond mat sci, inst semicond, beijing 100083, peoples r china; chinese acad sci, inst semicond, natl lab superlattices & microstruct, beijing 100083, peoples r china
摘要	Red-emission at similar to 640 nm from self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots grown on GaAs substrate by molecular beam epitaxy (MBE) has been demonstrated. We obtained a double-peak structure of photoluminescence (PL) spectra from quantum dots. An atomic force micrograph (AFM) image for uncapped sample also shows a bimodal distribution of dot sizes. From the temperature and excitation intensity dependence of PL spectra, we found that the double-peak structure of PL spectra from quantum dots was strongly correlated to the two predominant quantum dot families. Taking into account quantum-size effect on the peak energy, we propose that the high (low) energy peak results from a smaller (larger) dot family, and this result is identical with the statistical distribution of dot lateral size from the AFM image.
关键词	Bimodal Distribution Photoluminescence (Pl) Quantum-size Effect Ge Ensembles Si(100) Growth Shape
学科领域	半导体材料
主办者	TMS.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/15043
专题	中国科学院半导体研究所（2009年前）
通讯作者	Zhou W Chinese Acad Sci Lab Semicond Mat Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Zhou W,Xu B,Xu HZ,et al. Photoluminescence study on coarsening of self-assembled InAlAs quantum dots on GaAs (001)[C]. 420 COMMONWEALTH DR, WARRENDALE, PA 15086 USA:MINERALS METALS MATERIALS SOC,1999:528-531.

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