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GaN-based violet lasers grown on sapphire with a novel facet fabrication method 会议论文
, 中国深圳, 2015
作者:  Yingdong Tian;  Yun Zhang;  Jianchang Yan;  Xiang Chen;  Yanan Guo;  Xuecheng Wei;  Junxi Wang;  Jinmin Li
Adobe PDF(336Kb)  |  收藏  |  浏览/下载：1021/5  |  提交时间：2016/06/02
Monte Carlo simulation of the modulated effect induced by the dislocation to the quantum dot growth 会议论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, Beijing, PEOPLES R CHINA, SEP 13-19, 2005
作者:  Zhao C;  Chen YH;  Zhao M;  Zhang CL;  Xu B;  Yu LK;  Sun J;  Lei W;  Wang ZG;  Zhao, C, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: czhao@semi.ac.cn
Adobe PDF(330Kb)  |  收藏  |  浏览/下载：1724/335  |  提交时间：2010/03/29
Monte Carlo Simulation  
Defect influence on luminescence efficiency of GaN-based LEDs 会议论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, Beijing, PEOPLES R CHINA, SEP 13-19, 2005
作者:  Li SP (Li Shuping);  Fang ZL (Fang Zhilai);  Chen HY (Chen Hangyang);  Li JC (Li Jinchai);  Chen XH (Chen Xiaohong);  Yuan XL (Yuan Xiaoli);  Sekiguchi T (Sekiguchi Takashi);  Wang QM (Wang Qiming);  Kang JY (Kang Junyong);  Kang, JY, Xiamen Univ, Dept Phys, Xiamen 361005, Peoples R China. 电子邮箱地址: jykang@xmu.edu.cn
Adobe PDF(142Kb)  |  收藏  |  浏览/下载：1435/288  |  提交时间：2010/03/29
Defects  
Edge dislocation of b=[001]/2 in the InAs nanostructure on InP(001) 会议论文
SMIC-XIII 2004 13th International Conference on Semiconducting & Insulating Materials, Beijing, PEOPLES R CHINA, SEP 20-25, 2004
作者:  Wang YL;  Wu J;  Chen YH;  Wang ZG;  Zeng YP;  Wang, YL, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
Adobe PDF(4662Kb)  |  收藏  |  浏览/下载：1265/180  |  提交时间：2010/03/29
Layer-ordering Orientation  
Effect of noncoherent islands on the optical properties of the 1.3 mu m InAs/GaAs quantum dots during rapid thermal annealing 会议论文
SMIC-XIII 2004 13th International Conference on Semiconducting & Insulating Materials, Beijing, PEOPLES R CHINA, SEP 20-25, 2004
作者:  Shi GX;  Xu B;  Ye XL;  Jin P;  Chen YH;  Wang YL;  Cui CX;  Wang ZG;  Shi, GX, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(869Kb)  |  收藏  |  浏览/下载：1492/273  |  提交时间：2010/03/29
1.3 Mu-m  
In situ annealing during the growth of relaxed SiGe 会议论文
OPTICAL AND INFRARED THIN FILMS, 4094, SAN DIEGO, CA, 36739
作者:  Li DZ;  Huang CJ;  Cheng BW;  Wang HJ;  Yu Z;  Zhang CH;  Yu JZ;  Wang QM;  Li DZ Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China.
Adobe PDF(1540Kb)  |  收藏  |  浏览/下载：1222/204  |  提交时间：2010/10/29
Ultrahigh Vacuum Chemical Vapor Deposition  Sige  Refractive High Energy Electron Diffraction  Tansmission Electron Microscopy  Double Crystal X-ray Diffraction  Mobility 2-dimensional Electron  Critical Thickness  Strained Layers  Ge  Relaxation  Epilayers  Si1-xgex  Gesi/si  Gases  
A model of dislocations at the interface of the bonded wafers 会议论文
OPTICAL INTERCONNECTS FOR TELECOMMUNICATION AND DATA COMMUNICATIONS, 4225, BEIJING, PEOPLES R CHINA, NOV 08-10, 2000
作者:  Han WH;  Yu JZ;  Wang LC;  Wei HZ;  Zhang XF;  Wang QM;  Han WH Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(76Kb)  |  收藏  |  浏览/下载：1572/266  |  提交时间：2010/10/29
Wafer Bonding  Heteroepitaxy  Lattice Mismatch  Edge-like Dislocations  Thermal Stress  60 Degrees Dislocation Lines  Gaas  
Stoichiometry in GaAs grown in outer space measured nondestructively 会议论文
NONDESTRUCTIVE CHARACTERIZATION OF MATERIALS IX, 497, SYDNEY, AUSTRALIA, JUN 28-JUL 02, 1999
作者:  Chen NF;  Zhong XG;  Lin LY;  Chen NF Chinese Acad Sci Lab Semicond Mat Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
收藏  |  浏览/下载：896/0  |  提交时间：2010/10/29
Semiinsulating Gallium-arsenide  Crystals  Defects  
Strain relaxation of GeSi alloy with low dislocation density grown on low-temperature Si buffers 会议论文
JOURNAL OF CRYSTAL GROWTH, 201, CANNES, FRANCE, AUG 31-SEP 04, 1998
作者:  Peng CS;  Chen H;  Zhao ZY;  Li JH;  Dai DY;  Huang Q;  Zhou JM;  Zhang YH;  Tung CH;  Sheng TT;  Wang J;  Peng CS Chinese Acad Sci Inst Phys POB 603 Beijing 100080 Peoples R China.
Adobe PDF(208Kb)  |  收藏  |  浏览/下载：1531/311  |  提交时间：2010/11/15
Threading Dislocation  Si(100)  Layers  Films  
Structural properties of SI-GaAs grown in space 会议论文
GRAVITATIONAL EFFECTS IN MATERIALS AND FLUID SCIENCES, 24 (10), NAGOYA, JAPAN, JUL 12-19, 1998
作者:  Chen NF;  Wang YT;  Zhong XR;  Lin LY;  Chen NF Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
收藏  |  浏览/下载：945/0  |  提交时间：2010/11/15
Semiinsulating Gallium-arsenide  Microgravity  Stoichiometry