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背照射氮化镓基肖特基结构紫外探测器 专利
专利类型: 发明, 申请日期: 2007-05-02, 公开日期: 2009-06-04, 2009-06-11
Inventors:  赵德刚;  杨辉;  梁骏吾;  李向阳;  龚海梅
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提高铝镓氮材料质量的方法 专利
专利类型: 发明, 申请日期: 2007-05-02, 公开日期: 2009-06-04, 2009-06-11
Inventors:  赵德刚;  杨辉;  梁骏吾;  李向阳;  龚海梅
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Influence of defects in n(-)-GaN layer on the responsivity of Schottky barrier ultraviolet photodetectors 期刊论文
APPLIED PHYSICS LETTERS, 2007, 卷号: 90, 期号: 6, 页码: Art.No.062106
Authors:  Zhao DG;  Jiang DS;  Zhu JJ;  Liu ZS;  Zhang SM;  Liang JW;  Yang H;  Li X;  Li XY;  Gong HM;  Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: dgzhao@red.semi.ac.cn
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Chemical-vapor-deposition  
高响应度GaN肖特基势垒紫外探测器的性能与分析 期刊论文
半导体学报, 2007, 卷号: 28, 期号: 4, 页码: 592-596
Authors:  刘宗顺;  赵德刚;  朱建军;  张书明;  段俐宏;  王海;  史永生;  刘文宝;  张爽;  江德生;  杨辉
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Al compositional inhomogeneity of AlGaN epilayer with a high Al composition grown by metal-organic chemical vapour deposition 期刊论文
JOURNAL OF PHYSICS-CONDENSED MATTER, 2007, 卷号: 19, 期号: 17, 页码: Art.No.176005
Authors:  Wang XL;  Zhao DG;  Jiang DS;  Yang H;  Liang JW;  Jahn U;  Ploog K;  Wang, XL, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: WXL@mail.semi.ac.cn
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Sapphire  
The influence of V/III ratio in the initial growth stage on the properties of GaN epilayer deposited on low temperature AlN buffer layer 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2007, 卷号: 303, 期号: 2, 页码: 414-418
Authors:  Zhao DG;  Jiang DS;  Zhu JJ;  Liu ZS;  Zhang SM;  Yang H;  Liang JW;  Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: dgzhao@red.semi.ac.cn
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V/iii Ratio  
蓝紫光InGaN多量子阱激光器 期刊论文
中国科学. E辑, 技术科学, 2007, 卷号: 37, 期号: 3, 页码: 356-359
Authors:  李德尧;  张书明;  王建峰;  陈俊;  陈良惠;  种明;  朱建军;  赵德刚;  刘宗顺;  杨辉;  梁骏吾
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AlGaN/GaN异质结紫外探测器 期刊论文
红外与激光工程, 2007, 卷号: 36, 期号: 6, 页码: 917-919
Authors:  陈俊;  许金通;  李雪;  陈亮;  赵德刚;  李向阳
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一种新型GaN基肖特基结构紫外探测器 期刊论文
物理学报, 2007, 卷号: 56, 期号: 9, 页码: 5513-5517
Authors:  周梅;  左淑华;  赵德刚
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非故意掺杂n型GaN的负持续光电导现象 期刊论文
半导体学报, 2007, 卷号: 28, 期号: 6, 页码: 878-882
Authors:  苏志国;  许金通;  陈俊;  李向阳;  刘骥;  赵德刚
Adobe PDF(377Kb)  |  Favorite  |  View/Download:731/275  |  Submit date:2010/11/23