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Thermal analysis of the cavity facet for an 808 nm semiconductor laser by using near-field scanning optical microscopy 期刊论文
Journal of Semiconductors, 2010, 卷号: 31, 期号: 10, 页码: 104007-1-104007-5
Authors:  Rao Lan;  Song Guofeng;  Chen Lianghui
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NiO removal of Ni/Au Ohmic contact to p-GaN after annealing 期刊论文
半导体学报, 2009, 卷号: 30, 期号: 2, 页码: 101-104
Authors:  Lin Mengzhe;  Cao Qing;  Yan Tingjing;  Zhang Shuming;  Chen Lianghui
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Distinct two dimensional lateral ordering of self-assembled quantum dots 期刊论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2008, 卷号: 40, 期号: 6, 页码: 1952-1954
Authors:  Ma WQ;  Sun YW;  Yang XJ;  Jiang DS;  Chen LH;  Ma, WQ, Chinese Acad Sci, Inst Semicond, Lab NanoOptoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址:
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Lateral Ordering  
Gain Switch of an AlGaInP Red Light Semiconductor Laser Diode 期刊论文
半导体学报, 2008, 卷号: 29, 期号: 7, 页码: 1274-1277
Authors:  Liu Yuntao;  Song Guofeng;  Chen Lianghui
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Continuous-wave operation of GaN based multi-quantum-well laser diode at room temperature 期刊论文
CHINESE PHYSICS LETTERS, 2008, 卷号: 25, 期号: 4, 页码: 1281-1283
Authors:  Zhang LQ;  Zhang SM;  Yang H;  Cao Q;  Ji L;  Zhu JJ;  Liu ZS;  Zhao DG;  Jiang DS;  Duan LH;  Wang H;  Shi YS;  Liu SY;  Chen LH;  Liang JW;  Zhang, LQ, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址:
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Enhanced infrared absorption of spatially ordered quantum dot arrays 期刊论文
INFRARED PHYSICS & TECHNOLOGY, 2007, 卷号: 50, 期号: 2-3, 页码: 162-165
Authors:  Ma WQ;  Sun YW;  Yang XJ;  Chong M;  Jiang DS;  Chen LH;  Ma, WQ, Chinese Acad Sci, Inst Semicond, Lab Nanooptoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址:
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Quantum Dots  
Temperature Distribution in Ridge Structure InGaN Laser Diodes and Its Influence on Device Characteristics 期刊论文
半导体学报, 2006, 卷号: 27, 期号: 3, 页码: 499-505
Authors:  Li Deyao;  Huang Yongzhen;  Zhang Shuming;  Zhong Ming;  Ye Xiaojun;  Zhu Jianjun;  Zhao Degang;  Chen Lianghui;  Yang Hui;  Liang Junwu
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High-Power Distributed Feedback Laser Diodes Emitting at 820nm 期刊论文
半导体学报, 2006, 卷号: 27, 期号: 6, 页码: 966-969
Authors:  Fu Shenghui;  Song Guofeng;  Zhong Yuan;  Chen Lianghui
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Analysis of Si/GaAs Bonding Stresses with the Finite Element Method 期刊论文
半导体学报, 2006, 卷号: 27, 期号: 11, 页码: 1906-1910
Authors:  He Guorong;  Yang Guohua;  Zheng Wanhua;  Wu Xuming;  Wang Xiaodong;  Cao Yulian;  Wang Qing;  Chen Lianghui
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Material Growth and Device Fabrication of GaN-Based Blue-Violet Laser Diodes 期刊论文
半导体学报, 2005, 卷号: 26, 期号: 2, 页码: 414-417
Authors:  Yang Hui;  Chen Lianghui;  Zhang Shuming;  Chong Ming;  Zhu Jianjun;  Zhao Degang;  Ye Xiaojun;  Li Deyao;  Liu Zongshun;  Duan Lihong;  Zhao Wei;  Wang Hai;  Shi Yongsheng;  Cao Qing;  Sun Jie;  Chen Jun;  Liu Suying;  Jin Ruiqin;  Liang Junwu
Adobe PDF(325Kb)  |  Favorite  |  View/Download:1142/455  |  Submit date:2010/11/23