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Interface effect on emission properties of Er-doped Si nanoclusters embedded in SiO2 prepared by magnetron sputtering 期刊论文
JOURNAL OF APPLIED PHYSICS, 2006, 卷号: 99, 期号: 9, 页码: Art.No.094302
Authors:  Bian LF;  Zhang CG;  Chen WD;  Hsu CC;  Qu YH;  Jiang DS;  Bian, LF, Chinese Acad Sci, Inst Semicond, State Key Lab Surface Phys, Beijing 100083, Peoples R China. E-mail: guobian@semi.ac.cn
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Room-temperature  Silicon  Semiconductors  Dislocations  Spectra  
Photon localization and lasing in disordered GaNxAs1-x optical superlattices 期刊论文
PHYSICAL REVIEW B, 2006, 卷号: 73, 期号: 19, 页码: Art.No.195112
Authors:  Sun BQ;  Jiang DS;  Sun, BQ, Chinese Acad Sci, Inst Semicond, SKLSM, POB 911, Beijing 100083, Peoples R China. E-mail: bqsun@red.semi.ac.cn
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Random Laser  Scattering  Media  Light  Absorption  Cavities  Gain  
Parasitic reaction and its effect on the growth rate of AlN by metalorganic chemical vapor deposition 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2006, 卷号: 289, 期号: 1, 页码: 72-75
Authors:  Zhao DG;  Zhu JJ;  Jiang DS;  Yang H;  Liang JW;  Li XY;  Gong HM;  Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. E-mail: dgzhao@red.semi.ac.cn
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Growth Rate  Parasitic Reaction  Mocvd  Aln  Gas-phase Reactions  Movpe Growth  Algan Movpe  Alxga1-xn  
Magnetophotoluminescence of Zn0.88Mn0.12Se grown by metal-organic chemical vapor deposition on GaAs substrates 期刊论文
JOURNAL OF APPLIED PHYSICS, 2006, 卷号: 99, 期号: 7, 页码: Art.No.073517
Authors:  Lu SL;  Jiang DS;  Dai JM;  Yang CL;  He HT;  Ge WK;  Wang JN;  Chang K;  Zhang JY;  Shen DZ;  Wang, JN, Hong Kong Univ Sci & Technol, Dept Phys, Clear Water Bay, Hong Kong, Hong Kong, Peoples R China. E-mail: phjwang@ust.hk
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Quantum Dots  Exchange Interaction  Magnetic-fields  Zn1-xmnxse  Znmnse  Excitons  
Role of edge dislocations in enhancing the yellow luminescence of n-type GaN 期刊论文
APPLIED PHYSICS LETTERS, 2006, 卷号: 88, 期号: 24, 页码: Art.No.241917
Authors:  Zhao DG;  Jiang DS;  Zhu JJ;  Liu ZS;  Zhang SM;  Liang JW;  Li X;  Li XY;  Gong HM;  Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. E-mail: dgzhao@red.semi.ac.cn
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Chemical-vapor-deposition  Molecular-beam Epitaxy  X-ray-diffraction  Mg-doped Gan  Undoped Gan  Photoluminescence Bands  Threading Dislocations  Positron-annihilation  Growth Stoichiometry  Gallium Nitride  
Measurement of threading dislocation densities in GaN by wet chemical etching 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2006, 卷号: 21, 期号: 9, 页码: 1229-1235
Authors:  Chen J;  Wang JF;  Wang H;  Zhu JJ;  Zhang SM;  Zhao DG;  Jiang DS;  Yang H;  Jahn U;  Ploog KH;  Chen, J, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. E-mail: jchen@red.semi.ac.cn
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X-ray-diffraction  
Optical properties of inGaAs/GaAs quantum wells grown by Sb-assisted molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2006, 卷号: 288, 期号: 1, 页码: 40529
Authors:  Jiang DS;  Qu YH;  Ni HQ;  Wu DH;  Xu YQ;  Niu ZC;  Jiang, DS, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. E-mail: dsjiang@red.semi.ac.cn
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Molecular Beam Epitaxy  Quantum Wells  Semiconducting Iii-v Materials  Mu-m  Lasers  Temperature  Surfactant  Nm