SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Role of edge dislocations in enhancing the yellow luminescence of n-type GaN
Zhao DG; Jiang DS; Zhu JJ; Liu ZS; Zhang SM; Liang JW; Li X; Li XY; Gong HM; Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. E-mail: dgzhao@red.semi.ac.cn
2006
Source PublicationAPPLIED PHYSICS LETTERS
ISSN0003-6951
Volume88Issue:24Pages:Art.No.241917
AbstractWe investigate the origin of yellow luminescence in n-type GaN. It is found that the relative intensity of yellow luminescence increases as the full width at half maximum of the x-ray diffraction rocking curve at the (102) plane increases. This indicates that the yellow luminescence is related to the edge dislocation density. In addition, the relative intensity of yellow luminescence is confirmed to increase with increasing Si doping for the high quality GaN we have obtained. We propose that the yellow luminescence is effectively enhanced by the transition from donor impurities such as Si to acceptors around the edge dislocations in n-type GaN. (c) 2006 American Institute of Physics.
metadata_83chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china; chinese acad sci, shanghai inst tech phys, shanghai 200083, peoples r china
KeywordChemical-vapor-deposition Molecular-beam Epitaxy X-ray-diffraction Mg-doped Gan Undoped Gan Photoluminescence Bands Threading Dislocations Positron-annihilation Growth Stoichiometry Gallium Nitride
Subject Area光电子学
Indexed BySCI
Language英语
Date Available2010-04-11
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/10614
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorZhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. E-mail: dgzhao@red.semi.ac.cn
Recommended Citation
GB/T 7714
Zhao DG,Jiang DS,Zhu JJ,et al. Role of edge dislocations in enhancing the yellow luminescence of n-type GaN[J]. APPLIED PHYSICS LETTERS,2006,88(24):Art.No.241917.
APA Zhao DG.,Jiang DS.,Zhu JJ.,Liu ZS.,Zhang SM.,...&Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. E-mail: dgzhao@red.semi.ac.cn.(2006).Role of edge dislocations in enhancing the yellow luminescence of n-type GaN.APPLIED PHYSICS LETTERS,88(24),Art.No.241917.
MLA Zhao DG,et al."Role of edge dislocations in enhancing the yellow luminescence of n-type GaN".APPLIED PHYSICS LETTERS 88.24(2006):Art.No.241917.
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