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Temperature-dependent bimodal size evolution of InAs quantum dots on vicinal GaAs(100) substrates 期刊论文
JOURNAL OF APPLIED PHYSICS, 2006, 卷号: 100, 期号: 10, 页码: Art.No.103503
Authors:  Liang S (Liang S.);  Zhu HL (Zhu H. L.);  Wang W (Wang W.);  Liang, S, Chinese Acad Sci, Inst Semicond, Natl Res Ctr Optoelect Technol, Beijing 100083, Peoples R China. E-mail: liangsong@red.semi.ac.cn
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Chemical-vapor-deposition  Optical-properties  Phase-epitaxy  Mu-m  Gaas  Surface  Growth  Misorientation  Fabrication  Uniformity  
Electronic structure and binding energy of a hydrogenic impurity in a hierarchically self-assembled GaAs/AlxGa1-xAs quantum dot 期刊论文
JOURNAL OF APPLIED PHYSICS, 2006, 卷号: 100, 期号: 8, 页码: Art.No.083714
Authors:  Li SS (Li Shu-Shen);  Xia JB (Xia Jian-Bai);  Li, SS, AST, World Lab, POB 8730, Beijing 100080, Peoples R China.
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Semiconductors  States  
Photoinduced spin alignment of the magnetic ions in (Ga,Mn)As 期刊论文
JOURNAL OF APPLIED PHYSICS, 2006, 卷号: 100, 期号: 8, 页码: Art.No.083104
Authors:  Sun BQ (Sun Baoquan);  Jiang DS (Jiang Desheng);  Sun Z (Sun Zheng);  Ruan XZ (Ruan Xuezhong);  Deng JJ (Deng Jiajun);  Zhao JH (Zhao Jianhua);  Ji Y (Ji Yang);  Xu ZY (Xu Zhongying);  Sun, BQ, Chinese Acad Sci, Inst Semicond, SKLSM, POB 912, Beijing 100083, Peoples R China. E-mail: bqsun@red.semi.ac.cn
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Cdte/cd1-xmnxte Quantum-wells  Semiconductor Heterostructures  Larmor Precession  Mn2++ Moments  Dynamics  Polarons  Spectroscopy  Organization  Cd1-xmnxse  Carriers  
Thermal stress analysis for GaInAsP multiple quantum well wafer chemically bonded to Si (100) 期刊论文
JOURNAL OF APPLIED PHYSICS, 2006, 卷号: 100, 期号: 2, 页码: Art.No.023513
Authors:  Zhao HQ (Zhao Hong-Quan);  Yu LJ (Yu Li-Juan);  Huang YZ (Huang Yong-Zhen);  Zhao, HQ, Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, POB 912, Beijing 100083, Peoples R China. E-mail: zhggeneral@red.semi.ac.cn
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Activated Bonding Method  Room-temperature  Epitaxial Overgrowths  Surface  Crystal  Gaas  Technology  Energy  Films  
Correlation between optical and electrical properties in In0.52Al0.48As/InxGa1-xAs metamorphic high-electron-mobility-transistor structures on GaAs substrates 期刊论文
JOURNAL OF APPLIED PHYSICS, 2006, 卷号: 100, 期号: 3, 页码: Art.No.033705
Authors:  Cui LJ (Cui L. J.);  Zeng YP (Zeng Y. P.);  Wang BQ (Wang B. Q.);  Zhu ZP (Zhu Z. P.);  Guo SL (Guo S. L.);  Chu JH (Chu J. H.);  Cui, LJ, Chinese Acad Sci, Novel Mat Lab, Inst Semicond, Beijing 100083, Peoples R China. E-mail: ljcui@red.semi.ac.cn
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Quantum-well Structures  Photoluminescence Spectra  Hemts  
Shrinkage of nanocavities in silicon during electron beam irradiation 期刊论文
JOURNAL OF APPLIED PHYSICS, 2006, 卷号: 100, 期号: 3, 页码: Art.No.034304
Authors:  Zhu XF (Zhu Xianfang);  Zhu, XF, Xiamen Univ, Dept Phys, Lab Low Dimens Nanostruct, Xiamen 316005, Peoples R China. E-mail: xianfangzhu@hotmail.com
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Preferential Amorphization  Ion irradiatIon  Amorphous Si  In-situ  Voids  
Temperature and pressure dependences of the copper-related green emission in ZnO microrods 期刊论文
JOURNAL OF APPLIED PHYSICS, 2006, 卷号: 100, 期号: 1, 页码: Art.No.013107
Authors:  Su FH (Su F. H.);  Liu YF (Liu Y. F.);  Chen W (Chen W.);  Wang WJ (Wang W. J.);  Ding K (Ding K.);  Li GH (Li G. H.);  Joly AG (Joly A. G.);  McCready DE (McCready D. E.);  Chen, W, Univ Texas, Dept Phys, POB 19059, Arlington, TX 76019 USA. E-mail: fhsu@red.semi.ac.cn;  wchen@nomadics.com;  ghli@red.semi.ac.cn
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Zinc-oxide  Optical-properties  Photoluminescence  Luminescence  Impurities  Nanowires  Sapphire  Growth  Band  Cu  
Influence of longitudinal electric field on the hot-phonon effect in quantum wells 期刊论文
JOURNAL OF APPLIED PHYSICS, 2006, 卷号: 100, 期号: 1, 页码: Art.No.013707
Authors:  Zhang JZ (Zhang J. -Z.);  Zhu BF (Zhu B. -F.);  Zhang, JZ, Heriot Watt Univ, Sch Engn & Phys Sci, Edinburgh EH14 4AS, Midlothian, Scotland. E-mail: phyjz@phy.hw.ac.uk
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Cascade Lasers  Superlattices  Relaxation  Rates  Simulation  Transport  Dynamics  Carriers  Modes  
The Stark effect on excitons in a bilayer system 期刊论文
JOURNAL OF APPLIED PHYSICS, 2006, 卷号: 100, 期号: 1, 页码: Art.No.013512
Authors:  Wang L (Wang Li);  Li SS (Li Shu-Shen);  Wang, L, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. E-mail: wangli@mail.semi.ac.cn
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Bose-einstein Condensation  Quantum-wells  Dots  
Thermal lensing effect in ridge structure InGaN multiple quantum well laser diodes 期刊论文
JOURNAL OF APPLIED PHYSICS, 2006, 卷号: 100, 期号: 4, 页码: Art.No.046101
Authors:  Li DY (Li D. Y.);  Huang YZ (Huang Y. Z.);  Zhu JJ (Zhu J. J.);  Zhao DG (Zhao D. G.);  Liu ZS (Liu Z. S.);  Zhang SM (Zhang S. M.);  Ye XJ (Ye X. J.);  Chong M (Chong M.);  Chen LH (Chen L. H.);  Yang H (Yang H.);  Liang JW (Liang J. W.);  Li, DY, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect & Nanooptoelec, POB 912, Beijing 100083, Peoples R China. E-mail: dyli@red.semi.ac.cn
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Linewidth Enhancement Factor  Wave-guide Laser  Gan Substrate  Index  Temperature  Gain