SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Electronic structure and binding energy of a hydrogenic impurity in a hierarchically self-assembled GaAs/AlxGa1-xAs quantum dot
Li SS (Li Shu-Shen); Xia JB (Xia Jian-Bai); Li, SS, AST, World Lab, POB 8730, Beijing 100080, Peoples R China.
2006
Source PublicationJOURNAL OF APPLIED PHYSICS
ISSN0021-8979
Volume100Issue:8Pages:Art.No.083714
AbstractWe calculate the electronic structures and binding energy of a hydrogenic impurity in a hierarchically self-assembled GaAs/AlxGa1-xAs quantum dot (QD) in the framework of effective-mass envelope-function theory. The variation of the electronic structures and binding energy with the QD structure parameters and the position of the impurity are studied in detail. We find that (1) acceptor impurity energy levels depend more sensitively on the size of the QD than those of a donor impurity; (2) all impurity energy levels strongly depend on the GaAs quantum well (QW) width; (3) a donor impurity in the QD has only one binding energy level except when the GaAs QW is large; (4) an acceptor impurity in the QD has two binding energy levels, which correspond to heavy- and light-hole quantum states; (5) the binding energy has a maximum value when the impurity is located below the symmetry axis along the growth direction; and (6) the binding energy has a minimum value when the impurity is located at the top corner of the QD. (c) 2006 American Institute of Physics.
metadata_83ast, world lab, beijing 100080, peoples r china; chinese acad sci, inst semicond, state key lab superlattices & microstruct, beijing 100083, peoples r china
KeywordSemiconductors States
Subject Area半导体物理
Indexed BySCI
Language英语
Date Available2010-04-11
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/10324
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorLi, SS, AST, World Lab, POB 8730, Beijing 100080, Peoples R China.
Recommended Citation
GB/T 7714
Li SS ,Xia JB ,Li, SS, AST, World Lab, POB 8730, Beijing 100080, Peoples R China.. Electronic structure and binding energy of a hydrogenic impurity in a hierarchically self-assembled GaAs/AlxGa1-xAs quantum dot[J]. JOURNAL OF APPLIED PHYSICS,2006,100(8):Art.No.083714.
APA Li SS ,Xia JB ,&Li, SS, AST, World Lab, POB 8730, Beijing 100080, Peoples R China..(2006).Electronic structure and binding energy of a hydrogenic impurity in a hierarchically self-assembled GaAs/AlxGa1-xAs quantum dot.JOURNAL OF APPLIED PHYSICS,100(8),Art.No.083714.
MLA Li SS ,et al."Electronic structure and binding energy of a hydrogenic impurity in a hierarchically self-assembled GaAs/AlxGa1-xAs quantum dot".JOURNAL OF APPLIED PHYSICS 100.8(2006):Art.No.083714.
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