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Room temperature photoluminescence of Ge-on-insulator structures formed by rapid melt growth 期刊论文
JOURNAL OF APPLIED PHYSICS, 2013, 卷号: 113, 期号: 14, 页码: 143107
Authors:  Wen, Juanjuan;  Liu, Zhi;  Li, Leliang;  Li, Chong;  Xue, Chunlai;  Zuo, Yuhua;  Li, Chuanbo;  Wang, Qiming;  Cheng, Buwen
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Effect of light Si-doping on the near-band-edge emissions in high quality GaN 期刊论文
JOURNAL OF APPLIED PHYSICS, 2012, 卷号: 112, 期号: 5, 页码: 053104
Authors:  Le LC (Le, L. C.);  Zhao DG (Zhao, D. G.);  Jiang DS (Jiang, D. S.);  Wu LL (Wu, L. L.);  Li L (Li, L.);  Chen P (Chen, P.);  Liu ZS (Liu, Z. S.);  Zhu JJ (Zhu, J. J.);  Wang H (Wang, H.);  Zhang SM (Zhang, S. M.);  Yang H (Yang, H.)
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Thermal characterization of GaN-based laser diodes by forward-voltage method 期刊论文
JOURNAL OF APPLIED PHYSICS, 2012, 卷号: 111, 期号: 9, 页码: 94513
Authors:  Feng, MX;  Zhang, SM;  Jiang, DS;  Liu, JP;  Wang, H;  Zeng, C;  Li, ZC;  Wang, HB;  Wang, F;  Yang, H
Adobe PDF(635Kb)  |  Favorite  |  View/Download:904/361  |  Submit date:2013/03/17
Light extraction efficiency improvement and strain relaxation in InGaN/GaN multiple quantum well nanopillars 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 8, 页码: Article no.84339
Authors:  Zhu JH;  Wang LJ;  Zhang SM;  Wang H;  Zhao DG;  Zhu JJ;  Liu ZS;  Jiang DS;  Yang H;  Zhang, SM, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. smzhang@red.semi.ac.cn
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The investigation on carrier distribution in InGaN/GaN multiple quantum well layers 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 9, 页码: Article no.93117
Authors:  Zhu JH;  Zhang SM;  Wang H;  Zhao DG;  Zhu JJ;  Liu ZS;  Jiang DS;  Qiu YX;  Yang H;  Zhang, SM, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. smzhang@red.semi.ac.cn
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Diodes  Efficiency  
A study on the spectral response of back-illuminated p-i-n AlGaN heterojunction ultraviolet photodetector 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 110, 期号: 5, 页码: 53701
Authors:  Zhao DG;  Zhang S;  Jiang DS;  Zhu JJ;  Liu ZS;  Wang H;  Zhang SM;  Zhang BS;  Yang H;  Zhao, DG (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China, dgzhao@red.semi.ac.cn
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Surface Photovoltage Spectroscopy  Iii-nitrides  
Size-dependent electroluminescence from Si quantum dots embedded in amorphous SiC matrix 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 110, 期号: 6, 页码: 64322
Authors:  Rui YJ;  Li SX;  Xu J;  Song C;  Jiang XF;  Li W;  Chen KJ;  Wang QM;  Zuo YH;  Rui, YJ (reprint author), Nanjing Univ, Sch Elect Sci & Engn, Nanjing 210093, Peoples R China, junxu@nju.edu.cn
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Silicon Nanocrystallites  Luminescence  Confinement  Photoluminescence  Microcrystals  Nanoclusters  Superlattice  Multilayers  Electrons  States  
The fabrication of GaN-based nanopillar light-emitting diodes 期刊论文
JOURNAL OF APPLIED PHYSICS, 2010, 卷号: 108, 期号: 7, 页码: Art. No. 074302
Authors:  Zhu JH (Zhu Jihong);  Wang LJ (Wang Liangji);  Zhang SM (Zhang Shuming);  Wang H (Wang Hui);  Zhao DG (Zhao Degang);  Zhu JJ (Zhu Jianjun);  Liu ZS (Liu Zongshun);  Jiang DS (Jiang Desheng);  Yang H (Yang Hui);  Zhu, JH, Chinese AcadSci, State Key Lab Integrated Optoelect, InstSemicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: smzhang@red.semi.ac.cn
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Masks  Ni  
Optical properties of light-hole excitons in GaN epilayers 期刊论文
JOURNAL OF APPLIED PHYSICS, 2010, 卷号: 108, 期号: 11, 页码: Article no.116103
Authors:  Zhang F;  Xu SJ;  Ning JQ;  Zheng CC;  Zhao DG;  Yang H;  Che CM;  Zhang, F, Univ Hong Kong, Dept Phys, Pokfulam Rd, Hong Kong, Hong Kong, Peoples R China. sjxu@hkucc.hku.hk
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Transitions  Absorption  
Analysis of lateral current spreading in solar cell devices by spatially-resolved electroluminescence 期刊论文
JOURNAL OF APPLIED PHYSICS, 2010, 卷号: 107, 期号: 12, 页码: Art. No. 124501
Authors:  Xiong KL (Xiong Kanglin);  He W (He Wei);  Lu SL (Lu Shulong);  Zhou TF (Zhou Taofei);  Jiang DS (Jiang Desheng);  Wang RX (Wang Rongxin);  Qiu K (Qiu Kai);  Dong JR (Dong Jianrong);  Yang H (Yang Hui);  Yang, H, CAS, Suzhou Inst Nanotech & Nanobion, Ruoshui Rd 398, Suzhou 215125, Peoples R China. 电子邮箱地址: hyang2006@sinano.ac.cn
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Resistance  Reciprocity  Diode