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Optical properties of light-hole excitons in GaN epilayers
Zhang F; Xu SJ; Ning JQ; Zheng CC; Zhao DG; Yang H; Che CM; Zhang, F, Univ Hong Kong, Dept Phys, Pokfulam Rd, Hong Kong, Hong Kong, Peoples R China. sjxu@hkucc.hku.hk
2010
Source PublicationJOURNAL OF APPLIED PHYSICS
ISSN0021-8979
Volume108Issue:11Pages:Article no.116103
metadata_83[zhang, fan; xu, s. j.; ning, j. q.; zheng, c. c.] univ hong kong, dept phys, hong kong, hong kong, peoples r china; [zhao, d. g.] chinese acad sci, state key lab integrated optoelect, inst semicond, beijing 100083, peoples r china; [yang, h.] chinese acad sci, suzhou inst nanotech & nanobion, suzhou 215125, peoples r china; [che, c. m.] univ hong kong, inst mol funct mat, hku cas joint lab new mat, hong kong, hong kong, peoples r china; [che, c. m.] univ hong kong, dept chem, hong kong, hong kong, peoples r china
KeywordTransitions Absorption
Subject Area光电子学
Funding OrganizationNSFC [61028012]; University Grants Committee of the Hong Kong Special Administrative Region, China [AoE/P-03/08]
Indexed BySCI
Language英语
Date Available2011-07-05
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/21013
Collection集成光电子学国家重点实验室
Corresponding AuthorZhang, F, Univ Hong Kong, Dept Phys, Pokfulam Rd, Hong Kong, Hong Kong, Peoples R China. sjxu@hkucc.hku.hk
Recommended Citation
GB/T 7714
Zhang F,Xu SJ,Ning JQ,et al. Optical properties of light-hole excitons in GaN epilayers[J]. JOURNAL OF APPLIED PHYSICS,2010,108(11):Article no.116103.
APA Zhang F.,Xu SJ.,Ning JQ.,Zheng CC.,Zhao DG.,...&Zhang, F, Univ Hong Kong, Dept Phys, Pokfulam Rd, Hong Kong, Hong Kong, Peoples R China. sjxu@hkucc.hku.hk.(2010).Optical properties of light-hole excitons in GaN epilayers.JOURNAL OF APPLIED PHYSICS,108(11),Article no.116103.
MLA Zhang F,et al."Optical properties of light-hole excitons in GaN epilayers".JOURNAL OF APPLIED PHYSICS 108.11(2010):Article no.116103.
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