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High-responsivity GeSn short-wave infrared p-i-n photodetectors 期刊论文
APPLIED PHYSICS LETTERS, 2013, 卷号: 102, 期号: 14, 页码: 141111
Authors:  Zhang, Dongliang;  Xue, Chunlai;  Cheng, Buwen;  Su, Shaojian;  Liu, Zhi;  Zhang, Xu;  Zhang, Guangze;  Li, Chuanbo;  Wang, Qiming
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Room temperature direct-bandgap electroluminescence from n-type strain-compensated Ge/SiGe multiple quantum wells 期刊论文
APPLIED PHYSICS LETTERS, 2013, 卷号: 101, 期号: 23, 页码: 231108
Authors:  Liu, Zhi;  Hu, Weixuan;  Li, Chong;  Li, Yaming;  Xue, Chunlai;  Li, Chuanbo;  Zuo, Yuhua;  Cheng, Buwen;  Wang, Qiming
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Conductance modulation of Si nanowire arrays 期刊论文
APPLIED PHYSICS LETTERS, 2012, 卷号: 101, 期号: 22, 页码: 222101
Authors:  Li CB (Li, Chuanbo);  Krali E (Krali, Emiljana);  Fobelets K (Fobelets, Kristel);  Cheng BW (Cheng, Buwen);  Wang QM (Wang, Qiming)
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Can interference patterns in the reflectance spectra of GaN epilayers give important information of carrier concentration? 期刊论文
APPLIED PHYSICS LETTERS, 2012, 卷号: 101, 期号: 19, 页码: 191102
Authors:  Zheng CC (Zheng, C. C.);  Xu SJ (Xu, S. J.);  Zhang F (Zhang, F.);  Ning JQ (Ning, J. Q.);  Zhao DG (Zhao, D. G.);  Yang H (Yang, H.);  Che CM (Che, C. M.)
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Quadratic electro-optic effect in GaN-based materials 期刊论文
APPLIED PHYSICS LETTERS, 2012, 卷号: 100, 期号: 16, 页码: 161901
Authors:  Chen, P;  Zhao, DG;  Zuo, YH;  Jiang, DS;  Liu, ZS;  Wang, QM
Adobe PDF(629Kb)  |  Favorite  |  View/Download:679/268  |  Submit date:2013/03/17
Localized surface optical phonon mode in the InGaN/GaN multiple-quantum-wells nanopillars: Raman spectrum and imaging 期刊论文
APPLIED PHYSICS LETTERS, 2011, 卷号: 99, 期号: 11, 页码: 113115
Authors:  Zhu JH;  Ning JQ;  Zheng CC;  Xu SJ;  Zhang SM;  Yang H;  Zhu, JH (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China,;
Adobe PDF(1387Kb)  |  Favorite  |  View/Download:1038/389  |  Submit date:2012/02/06
Light-emitting-diodes  Laser-diodes  Gan  Nanowires  
Nonlinear behavior of photoluminescence from silicon particles under two-photon excitation 期刊论文
APPLIED PHYSICS LETTERS, 2011, 卷号: 99, 期号: 25, 页码: 251105
Authors:  Xu XS (Xu Xingsheng);  Yokoyama S (Yokoyama Shiyoshi)
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Dislocation cross-slip in GaN single crystals under nanoindentation 期刊论文
APPLIED PHYSICS LETTERS, 2011, 卷号: 98, 期号: 22, 页码: Art. No. 221906
Authors:  Huang J;  Xu K;  Gong XJ;  Wang JF;  Fan YM;  Liu JQ;  Zeng XH;  Ren GQ;  Zhou TF;  Yang H
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Berkovich Nanoindentation  Thin-films  Indentation  Mechanisms  Epilayers  
Intrinsic evolutions of optical functions, band gap, and higher-energy electronic transitions in VO(2) film near the metal-insulator transition region 期刊论文
APPLIED PHYSICS LETTERS, 2011, 卷号: 99, 期号: 24, 页码: 241903
Authors:  Li WW (Li W. W.);  Yu Q (Yu Q.);  Liang JR (Liang J. R.);  Jiang K (Jiang K.);  Hu ZG (Hu Z. G.);  Liu J (Liu J.);  Chen HD (Chen H. D.);  Chu JH (Chu J. H.)
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High-performance metamorphic InGaAs resonant cavity enhanced photodetector grown on GaAs substrate 期刊论文
APPLIED PHYSICS LETTERS, 2011, 卷号: 98, 期号: 20, 页码: Article no.201104
Authors:  Liu SQ;  Han Q;  Zhu B;  Yang XH;  Ni HQ;  He JF;  Wang X;  Li MF;  Zhu Y;  Wang J;  Wang XP;  Niu ZC;  Liu, SQ, Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, POB 912, Beijing 100083, Peoples R China.;
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I-n Photodiodes