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锗硅电光调制器研究 学位论文
, 北京: 中国科学院研究生院, 2014
Authors:  李亚明
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Room temperature direct-bandgap electroluminescence from n-type strain-compensated Ge/SiGe multiple quantum wells 期刊论文
APPLIED PHYSICS LETTERS, 2013, 卷号: 101, 期号: 23, 页码: 231108
Authors:  Liu, Zhi;  Hu, Weixuan;  Li, Chong;  Li, Yaming;  Xue, Chunlai;  Li, Chuanbo;  Zuo, Yuhua;  Cheng, Buwen;  Wang, Qiming
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Room temperature direct-bandgap electroluminescence from n-type strain-compensated Ge/SiGe multiple quantum wells 期刊论文
APPLIED PHYSICS LETTERS, 2012, 卷号: 101, 期号: 23, 页码: 231108
Authors:  Liu Z (Liu, Zhi);  Hu WX (Hu, Weixuan);  Li C (Li, Chong);  Li YM (Li, Yaming);  Xue CL (Xue, Chunlai);  Li CB (Li, Chuanbo);  Zuo YH (Zuo, Yuhua);  Cheng BW (Cheng, Buwen);  Wang QM (Wang, Qiming)
Adobe PDF(1078Kb)  |  Favorite  |  View/Download:1155/322  |  Submit date:2013/03/20
Light-emitting-diodes  Ge  Si  Silicon  Gain  Gap  
Enhanced photoluminescence and electroluminescence of multilayer GeSi islands on Si(001) substrates by phosphorus-doping 期刊论文
OPTICS EXPRESS, 2012, 卷号: 20, 期号: 20, 页码: 22327-22333
Authors:  Liu Z (Liu, Zhi);  Hu WX (Hu, Weixuan);  Su SJ (Su, Shaojian);  Li C (Li, Chong);  Li CB (Li, Chuanbo);  Xue CL (Xue, Chunlai);  Li YM (Li, Yaming);  Zuo YH (Zuo, Yuhua);  Cheng BW (Cheng, Buwen);  Wang QM (Wang, Qiming)
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Epitaxy of Ge on offcut Si substrate for growth of In0.01Ga0.99As 期刊论文
IEEE International Conference on Group IV Photonics GFP, 2011, 页码: 314-316
Authors:  Hu, Weixuan;  Cheng, Buwen;  Xue, Chunlai;  Su, Shaojian;  Liu, Zhi;  Li, Yaming;  Wang, Qiming;  Cheng, B.(cbw@semi.ac.cn)
Adobe PDF(237Kb)  |  Favorite  |  View/Download:1034/400  |  Submit date:2012/06/13
Epitaxial Growth  Germanium  Indium  Photonics  Semiconducting Silicon Compounds  Silicon  
硅基锗激光器及其制备方法 专利
专利类型: 发明, 公开日期: 2013-12-04
Inventors:  刘智;  成步文;  李传波;  李亚明;  薛春来;  左玉华;  王启明
Adobe PDF(1504Kb)  |  Favorite  |  View/Download:510/73  |  Submit date:2014/12/25