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Room temperature direct-bandgap electroluminescence from n-type strain-compensated Ge/SiGe multiple quantum wells
Liu, Zhi; Hu, Weixuan; Li, Chong; Li, Yaming; Xue, Chunlai; Li, Chuanbo; Zuo, Yuhua; Cheng, Buwen; Wang, Qiming
2013
Source PublicationAPPLIED PHYSICS LETTERS
Volume101Issue:23Pages:231108
Subject Area光电子学
Indexed BySCI
Language英语
Date Available2013-10-10
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24445
Collection集成光电子学国家重点实验室
Recommended Citation
GB/T 7714
Liu, Zhi,Hu, Weixuan,Li, Chong,et al. Room temperature direct-bandgap electroluminescence from n-type strain-compensated Ge/SiGe multiple quantum wells[J]. APPLIED PHYSICS LETTERS,2013,101(23):231108.
APA Liu, Zhi.,Hu, Weixuan.,Li, Chong.,Li, Yaming.,Xue, Chunlai.,...&Wang, Qiming.(2013).Room temperature direct-bandgap electroluminescence from n-type strain-compensated Ge/SiGe multiple quantum wells.APPLIED PHYSICS LETTERS,101(23),231108.
MLA Liu, Zhi,et al."Room temperature direct-bandgap electroluminescence from n-type strain-compensated Ge/SiGe multiple quantum wells".APPLIED PHYSICS LETTERS 101.23(2013):231108.
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