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Formation and characterization of Ni/Al Ohmic contact on n+-type GeSn 期刊论文
Solid-State Electronics, 2015, 卷号: 114, 页码: 178–181
Authors:  Xu Zhang;  Dongliang Zhang;  Jun Zheng;  Zhi Liu;  Chao He;  Chunlai Xue;  Guangze Zhang;  Chuanbo Li;  Buwen Cheng;  Qiming Wang
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Strained germanium–tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation 期刊论文
Solid-State Electronics, 2013, 卷号: 83, 页码: 66–70
Authors:  Lanxiang Wang, Shaojian Su, Wei Wang, Xiao Gong, Yue Yang, Pengfei Guo, Guangze Zhang, Chunlai Xue, Buwen Cheng, Genquan Han, Yee-Chia Yeo
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Strained germanium-tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation 期刊论文
SOLID-STATE ELECTRONICS, 2013, 卷号: 83, 页码: 66-70
Authors:  Wang, Lanxiang;  Su, Shaojian;  Wang, Wei;  Gong, Xiao;  Yang, Yue;  Guo, Pengfei;  Zhang, Guangze;  Xue, Chunlai;  Cheng, Buwen;  Han, Genquan;  Yeo, Yee-Chia
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High-responsivity GeSn short-wave infrared p-i-n photodetectors 期刊论文
APPLIED PHYSICS LETTERS, 2013, 卷号: 102, 期号: 14, 页码: 141111
Authors:  Zhang, Dongliang;  Xue, Chunlai;  Cheng, Buwen;  Su, Shaojian;  Liu, Zhi;  Zhang, Xu;  Zhang, Guangze;  Li, Chuanbo;  Wang, Qiming
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Germanium-Tin (GeSn) p-Channel MOSFETs Fabricated on (100) and (111) Surface Orientations With Sub-400 degrees C Si2H6 Passivation 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2013, 卷号: 34, 期号: 3, 页码: 339-341
Authors:  Gong, Xiao;  Han, Genquan;  Bai, Fan;  Su, Shaojian;  Guo, Pengfei;  Yang, Yue;  Cheng, Ran;  Zhang, Dongliang;  Zhang, Guangze;  Xue, Chunlai;  Cheng, Buwen;  Pan, Jisheng;  Zhang, Zheng;  Tok, Eng Soon;  Antoniadis, Dimitri;  Yeo, Yee-Chia
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Germanium-Tin n(+)/p Junction Formed Using Phosphorus Ion Implant and 400 degrees C Rapid Thermal Anneal 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2012, 卷号: 33, 期号: 11, 页码: 1529-1531
Authors:  Wang LX (Wang, Lanxiang);  Su SJ (Su, Shaojian);  Wang W (Wang, Wei);  Yang Y (Yang, Yue);  Tong Y (Tong, Yi);  Liu B (Liu, Bin);  Guo PF (Guo, Pengfei);  Gong X (Gong, Xiao);  Zhang GZ (Zhang, Guangze);  Xue CL (Xue, Chunlai);  Cheng BW (Cheng, Buwen);  Han GQ (Han, Genquan);  Yeo YC (Yeo, Yee-Chia)
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Strained germanium-tin (GeSn) N-channel MOSFETs featuring low temperature N+/P junction formation and GeSnO2 interfacial layer 期刊论文
Digest of Technical Papers - Symposium on VLSI Technology, 2012, 页码: 97-98
Authors:  Han, Genquan;  Su, Shaojian;  Wang, Lanxiang;  Zhang, Zheng;  Xue, Chunlai;  Cheng, Buwen;  Yeo, Yee-Chia;  Wang, Wei;  Gong, Xiao;  Yang, Yue;  Ivana;  Guo, Pengfei;  Guo, Cheng;  Zhang, Guangze;  Pan, Jisheng
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Zn-doped InGaAs Base Heterojunction Bipolar Transistors Grown by Low Pressure Metal Organic Chemical Vapor Deposition 期刊论文
Semiconductor Photonics and Technology, 2007, 卷号: 13, 期号: 3, 页码: 215-217
Authors:  LIN Tao;  CAI Daomin;  LI Xianjie;  JIANG Li;  ZHANG Guangze
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一种适合于大批量生产的激光器COD消除方法 专利
专利类型: 发明, 申请日期: 2006-12-13, 公开日期: 2009-06-04, 2009-06-11
Inventors:  郑凯;  马骁宇;  林涛;  刘素平;  张广泽
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数字多功能光盘用大功率650nm半导体激光器及制作方法 专利
专利类型: 发明, 申请日期: 2006-07-19, 公开日期: 2009-06-04, 2009-06-11
Inventors:  郑凯;  马骁宇;  林涛;  刘素平;  张广泽
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