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低偏角碳化硅同质/异质外延生长研究 学位论文
, 北京: 中国科学院半导体研究所, 2016
Authors:  闫果果
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The thermal stability study and improvement of 4H-SiC ohmic contact 期刊论文
APPLIED PHYSICS LETTERS, 2014, 卷号: 105, 期号: 12, 页码: 122106
Authors:  Liu, SB;  He, Z;  Zheng, L;  Liu, B;  Zhang, F;  Dong, L;  Tian, LX;  Shen, ZW;  Wang, JZ;  Huang, YJ;  Fan, ZC;  Liu, XF;  Yan, GG;  Zhao, WS;  Wang, L;  Sun, GS;  Yang, FH;  Zeng, YP
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Infrared reflectance study of 3C-SiC epilayers grown on silicon substrates 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2012, 卷号: 45, 期号: 24, 页码: 245102
Authors:  Dong, L;  Sun, GS;  Zheng, L;  Liu, XF;  Zhang, F;  Yan, GG;  Zhao, WS;  Wang, L;  Li, XG;  Wang, ZG
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Characterization of 4H-SiC substrates and epilayers by Fourier transform infrared reflectance spectroscopy 期刊论文
CHINESE PHYSICS B, 2012, 卷号: 21, 期号: 4, 页码: 47802
Authors:  Dong, L;  Sun, GS;  Zheng, L;  Liu, XF;  Zhang, F;  Yan, GG;  Zhao, WS;  Wang, L;  Li, XG;  Wang, ZG
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High-Performance 4H-SiC-Based Metal-Insulator-Semiconductor Ultraviolet Photodetectors With SiO(2) and Al(2)O(3)/SiO(2) Films 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2011, 卷号: 32, 期号: 12, 页码: 1722-1724
Authors:  Zhang F (Zhang Feng);  Sun GS (Sun Guosheng);  Huang HL (Huang Huolin);  Wu ZY (Wu Zhengyun);  Wang L (Wang Lei);  Zhao WS (Zhao Wanshun);  Liu XF (Liu Xingfang);  Yan GG (Yan Guoguo);  Zheng L (Zheng Liu);  Dong L (Dong Lin);  Zeng YP (Zeng Yiping)
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Determination of the transport properties in 4H-SiC wafers by Raman scattering measurement 期刊论文
CHINESE PHYSICS B, 2011, 卷号: 20, 期号: 3, 页码: Article no.33301
Authors:  Sun GS;  Liu XF;  Wu HL;  Yan GG;  Dong L;  Zheng L;  Zhao WS;  Wang L;  Zeng YP;  Li XG;  Wang ZG;  Sun, GS, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. gshsun@red.semi.ac.cn
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4h-sic  Raman Scattering  Lopc Modes  Transport Properties  Silicon-carbide  Light  Gap  
Multi-wafer 3C-SiC heteroepitaxial growth on Si(100) substrates 期刊论文
CHINESE PHYSICS B, 2010, 卷号: 19, 期号: 8, 页码: Art. No. 088101
Authors:  Sun GS (Sun Guo-Sheng);  Liu XF (Liu Xing-Fang);  Wang L (Wang Lei);  Zhao WS (Zhao Wan-Shun);  Yang T (Yang Ting);  Wu HL (Wu Hai-Lei);  Yan GG (Yan Guo-Guo);  Zhao YM (Zhao Yong-Mei);  Ning J (Ning Jin);  Zeng YP (Zeng Yi-Ping);  Li JM (Li Jin-Min)
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3c-sic  Heteroepitaxial  Multi-wafer  Uniformity  
集成傅里叶变换红外原位监测系统的原子层沉积装置 专利
专利类型: 发明, 专利号: CN102492939A, 公开日期: 2012-08-29, 2012-08-29, 2012-08-29
Inventors:  张峰;  孙国胜;  王雷;  赵万顺;  刘兴昉;  闫果果;  曾一平
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连续型HTCVD法碳化硅晶体生长装置 专利
专利类型: 发明, 专利号: CN102304763A, 公开日期: 2012-08-29, 2012-08-29, 2012-08-29
Inventors:  刘兴昉;  郑柳;  董林;  闫果果;  王雷;  赵万顺;  孙国胜;  曾一平;  李晋闽
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HTCVD法碳化硅晶体生长装置 专利
专利类型: 发明, 专利号: CN102304698A, 公开日期: 2012-08-29, 2012-08-29, 2012-08-29
Inventors:  刘兴昉;  董林;  郑柳;  闫果果;  王雷;  赵万顺;  孙国胜;  曾一平;  李晋闽
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