SEMI OpenIR  > 中科院半导体材料科学重点实验室
Determination of the transport properties in 4H-SiC wafers by Raman scattering measurement
Sun GS; Liu XF; Wu HL; Yan GG; Dong L; Zheng L; Zhao WS; Wang L; Zeng YP; Li XG; Wang ZG; Sun, GS, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. gshsun@red.semi.ac.cn
2011
Source PublicationCHINESE PHYSICS B
ISSN1674-1056
Volume20Issue:3Pages:Article no.33301
metadata_83[sun guo-sheng; zeng yi-ping; wang zhan-guo] chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china; [sun guo-sheng; liu xing-fang; wu hai-lei; yan guo-guo; dong lin; zheng liu; zhao wan-shun; wang lei; zeng yi-ping] chinese acad sci, inst semicond, ctr mat sci, beijing 100083, peoples r china; [sun guo-sheng; li xi-guang] dongguan tianyu semicond inc, dongguan 523000, peoples r china
Keyword4h-sic Raman Scattering Lopc Modes Transport Properties Silicon-carbide Light Gap
Subject Area半导体材料
Funding OrganizationNational Natural Science Foundation of China [60876003]; Chinese Academy of Sciences [Y072011000, ISCAS2008T04]; State Grid Corporation of China [ZL71-09-001]
Indexed BySCI
Language英语
Date Available2011-07-05
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/21249
Collection中科院半导体材料科学重点实验室
Corresponding AuthorSun, GS, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. gshsun@red.semi.ac.cn
Recommended Citation
GB/T 7714
Sun GS,Liu XF,Wu HL,et al. Determination of the transport properties in 4H-SiC wafers by Raman scattering measurement[J]. CHINESE PHYSICS B,2011,20(3):Article no.33301.
APA Sun GS.,Liu XF.,Wu HL.,Yan GG.,Dong L.,...&Sun, GS, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. gshsun@red.semi.ac.cn.(2011).Determination of the transport properties in 4H-SiC wafers by Raman scattering measurement.CHINESE PHYSICS B,20(3),Article no.33301.
MLA Sun GS,et al."Determination of the transport properties in 4H-SiC wafers by Raman scattering measurement".CHINESE PHYSICS B 20.3(2011):Article no.33301.
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