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The thermal stability study and improvement of 4H-SiC ohmic contact
Liu, SB; He, Z; Zheng, L; Liu, B; Zhang, F; Dong, L; Tian, LX; Shen, ZW; Wang, JZ; Huang, YJ; Fan, ZC; Liu, XF; Yan, GG; Zhao, WS; Wang, L; Sun, GS; Yang, FH; Zeng, YP
2014
Source PublicationAPPLIED PHYSICS LETTERS
Volume105Issue:12Pages:122106
Subject Area微电子学
Indexed BySCI
Language英语
Date Available2015-03-20
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26135
Collection半导体集成技术工程研究中心
Recommended Citation
GB/T 7714
Liu, SB,He, Z,Zheng, L,et al. The thermal stability study and improvement of 4H-SiC ohmic contact[J]. APPLIED PHYSICS LETTERS,2014,105(12):122106.
APA Liu, SB.,He, Z.,Zheng, L.,Liu, B.,Zhang, F.,...&Zeng, YP.(2014).The thermal stability study and improvement of 4H-SiC ohmic contact.APPLIED PHYSICS LETTERS,105(12),122106.
MLA Liu, SB,et al."The thermal stability study and improvement of 4H-SiC ohmic contact".APPLIED PHYSICS LETTERS 105.12(2014):122106.
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