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Growth of Hexagonal Columnar Nanograin Structured SiC Thin Films on Silicon Substrates with Graphene-Graphitic Carbon Nanoflakes Templates from Solid Carbon Sources 期刊论文
MATERIALS, 2013, 卷号: 6, 期号: 4, 页码: 1543-1553
Authors:  Liu, Xingfang;  Sun, Guosheng;  Liu, Bin;  Yan, Guoguo;  Guan, Min;  Zhang, Yang;  Zhang, Feng;  Chen, Yu;  Dong, Lin;  Zheng, Liu;  Liu, Shengbei;  Tian, Lixin;  Wang, Lei;  Zhao, Wanshun;  Zeng, Yiping
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Development of vertical 32" LPCVD system for fast epitaxial growth on 4H-SiC 期刊论文
Materials Science Forum, 2012, 卷号: 717-720, 页码: 105-108
Authors:  Zhao, Wanshun;  Sun, Guosheng;  Wu, Hailei;  Yan, Guoguo;  Zheng, Liu;  Dong, Lin;  Wang, Lei;  Liu, Xingfang;  Yang, Lijun
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Infrared reflectance study of 3C-SiC epilayers grown on silicon substrates 期刊论文
Journal of Physics D: Applied Physics, 2012, 卷号: 45, 期号: 24, 页码: 245102
Authors:  Dong, Lin;  Sun, Guosheng;  Zheng, Liu;  Liu, Xingfang;  Zhang, Feng;  Yan, Guoguo;  Zhao, Wanshun;  Wang, Lei;  Li, Xiguang;  Wang, Zhanguo
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High-Performance 4H-SiC-Based Metal-Insulator-Semiconductor Ultraviolet Photodetectors With SiO(2) and Al(2)O(3)/SiO(2) Films 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2011, 卷号: 32, 期号: 12, 页码: 1722-1724
Authors:  Zhang F (Zhang Feng);  Sun GS (Sun Guosheng);  Huang HL (Huang Huolin);  Wu ZY (Wu Zhengyun);  Wang L (Wang Lei);  Zhao WS (Zhao Wanshun);  Liu XF (Liu Xingfang);  Yan GG (Yan Guoguo);  Zheng L (Zheng Liu);  Dong L (Dong Lin);  Zeng YP (Zeng Yiping)
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High-Performance4H-SiC-based metal-insulator-semiconductor ultraviolet photodetectors with SiO2 and Al2O3SiO2 Films 期刊论文
IEEE Electron Device Letters, 2011, 卷号: 32, 期号: 12, 页码: 1722-1724
Authors:  Zhang, Feng;  Sun, Guosheng;  Huang, Huolin;  Wu, Zhengyun;  Wang, Lei;  Zhao, Wanshun;  Liu, Xingfang;  Yan, Guoguo;  Zheng, Liu;  Dong, Lin;  Zeng, Yiping;  Zhang, F.(fzhang@semi.ac.cn)
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Integrated Circuits  Metal Insulator Boundaries  Photodetectors  Semiconducting Silicon Compounds  Semiconductor Insulator Boundaries  Silicon Carbide  
Multi-wafer3C-SiC thin films grown on Si(100) in a vertical HWLPCVD reactor 期刊论文
Journal of Semiconductors, 2011, 卷号: 32, 期号: 6, 页码: 63001
Authors:  Yan, Guoguo;  Sun, Guosheng;  Wu, Hailei;  Wang, Lei;  Zhao, Wanshun;  Liu, Xingfang;  Zeng, Yiping;  Wen, Jialiang;  Yan, G.(ggyan@semi.ac.cn)
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Chemical Vapor Deposition  Deposition  Electric Resistance  Epitaxial Growth  Film Growth  Sheet Resistance  Silicon Carbide  Silicon Wafers  
4H-SiC同质外延层中的扩展缺陷研究 期刊论文
半导体光电, 2011, 卷号: 32, 期号: 3, 页码: 359-362
Authors:  闫果果;  孙国胜;  吴海雷;  王雷;  赵万顺;  刘兴昉;  董林;  郑柳;  曾一平
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Effect of annealing process on the surface roughness in multiple Al implanted4H-SiC 期刊论文
Journal of Semiconductors, 2011, 卷号: 32, 期号: 7, 页码: 72002
Authors:  Wu, Hailei;  Sun, Guosheng;  Yang, Ting;  Yan, Guoguo;  Wang, Lei;  Zhao, Wanshun;  Liu, Xingfang;  Zeng, Yiping;  Wen, Jialiang;  Wu, H.(hlwu@semi.ac.cn)
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Aluminum  Annealing  Ion implantatIon  Pressure Effects  Semiconducting Silicon Compounds  Silicon Carbide  Surface Roughness  
High-quality homoepitaxial layers grown on4H-SiC at a high growth rate by vertical LPCVD 期刊论文
Journal of Semiconductors, 2011, 卷号: 32, 期号: 4, 页码: 43005
Authors:  Wu, Hailei;  Sun, Guosheng;  Yang, Ting;  Yan, Guoguo;  Wang, Lei;  Zhao, Wanshun;  Liu, Xingfang;  Zeng, Yiping;  Wen, Jialiang;  Wu, H.(hlwu@semi.ac.cn)
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Epitaxial Growth  Ethylene  Growth Rate  Morphology  Surface Roughness  
电学测试的汞探针装置 专利
专利类型: 发明, 申请日期: 2010-08-12, 公开日期: 2010-02-10, 2010-08-12
Inventors:  纪 刚;  孙国胜;  宁 瑾;  刘兴昉;  赵永梅;  王 雷;  赵万顺;  曾一平;  李晋闽
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