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The thermal stability study and improvement of 4H-SiC ohmic contact 期刊论文
APPLIED PHYSICS LETTERS, 2014, 卷号: 105, 期号: 12, 页码: 122106
Authors:  Liu, SB;  He, Z;  Zheng, L;  Liu, B;  Zhang, F;  Dong, L;  Tian, LX;  Shen, ZW;  Wang, JZ;  Huang, YJ;  Fan, ZC;  Liu, XF;  Yan, GG;  Zhao, WS;  Wang, L;  Sun, GS;  Yang, FH;  Zeng, YP
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垂直结构GaN基LED的侧壁优化技术 期刊论文
半导体技术, 2011, 卷号: 36, 期号: 3, 页码: 206-209
Authors:  黄亚军;  刘志强;  伊晓燕;  王良臣;  王军喜;  李晋闽
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Nonadiabatic geometric quantum computation with trapped ions 期刊论文
PHYSICAL REVIEW A, 2002, 卷号: 66, 期号: 4, 页码: Art.No.042320
Authors:  Li XQ;  Cen LX;  Huang GX;  Ma L;  Yan YJ;  Li XQ,Chinese Acad Sci,Inst Semicond,Natl Lab Superlattices & Microstruct,POB 912,Beijing 100083,Peoples R China.
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Phase  
Raman study of low-temperature-grown Al0.29Ga0.71As/GaAs photorefractive materials 期刊论文
PHYSICAL REVIEW B, 2002, 卷号: 65, 期号: 12, 页码: Art.No.125325
Authors:  Guo LW;  Han YJ;  Hu CY;  Tan PH;  Yang FH;  Huang Q;  Zhou JM;  Guo LW,Chinese Acad Sci,Inst Phys,Ctr Condensed Matter Phys,POB 603,Beijing 100080,Peoples R China.
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Molecular-beam Epitaxy  Alxga1-xas Alloys  Gaas  Photoluminescence  
Evolution from point defects to arsenic clusters in low-temperature grown GaAs/AlGaAs multiple quantum wells 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2000, 卷号: 217, 期号: 4, 页码: 355-359
Authors:  Zhang MH;  Han YJ;  Zhang YH;  Huang Q;  Bao CL;  Wang WX;  Zhou JM;  Lu LW;  Zhang MH,Chinese Acad Sci,Inst Phys,Ctr Condensed Matter Phys,POB 603,Beijing 100080,Peoples R China.
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Lt-gaas  Lt Mqws  Defect  Photoluminescence  Electroabsorption  Spatial Light Modulators  Molecular-beam Epitaxy  Gaas  Recombination  Dynamics  
7umGaAs/AIGaAs多量子阱红外探测器 期刊论文
红外与毫米波学报, 1992, 卷号: 11, 期号: 1, 页码: 43
Authors:  方晓明;  黄醒良;  陆卫;  李言谨;  沈学础;  周小川;  钟战天;  蒋建;  徐贵昌;  杜全钢
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EFFECT OF SUBSTRATE PHOTOEXCITATION ON CHANNEL CONDUCTION IN A MODULATION-DOPED ALXGA1-XAS/GAAS HETEROSTRUCTURE 期刊论文
JOURNAL OF APPLIED PHYSICS, 1988, 卷号: 64, 期号: 5, 页码: 2488-2494
Authors:  JIANG PH;  HUANG YJ;  GE WK;  SUN DZ;  ZENG YP
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调制掺杂AlGaAs/GaAs异质结构中衬底光激发对导电沟道的作用 学位论文
, 北京: 中国科学院半导体研究所, 1987
Authors:  黄云吉
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高提取效率氮化镓发光二极管的制作方法 专利
专利类型: 发明, 专利号: CN201010534588.0, 公开日期: 2011-08-31
Inventors:  黄亚军;  樊中朝;  刘志强;  伊晓燕;  季安;  王军喜
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GaN基发光二极管的制备方法 专利
专利类型: 发明, 公开日期: 2014-07-30
Inventors:  黄亚军;  王莉;  樊中朝;  刘志强;  伊晓燕
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