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纳米硅太阳能电池材料研究 学位论文
, 北京: 中国科学院研究生院, 2013
Authors:  陶也了
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Substrate-induced stress in silicon nanocrystal/SiO2 multilayer structures 期刊论文
Chinese Physics B, 2012, 卷号: 21, 期号: 7, 页码: 077402
Authors:  Tao, Ye-Liao;  Zuo, Yu-Hua;  Zheng, Jun;  Xue, Chun-Lai;  Cheng, Bu-Wen;  Wang, Qi-Ming;  Xu, Jun
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Effect of growth temperature on surface morphology and structure of InAs/GaSb superlattices grown by metalorganic chemical vapor deposition 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2012, 卷号: 359, 页码: 55-59
Authors:  Li LG (Li, Li-Gong);  Liu SM (Liu, Shu-Man);  Luo S (Luo, Shuai);  Yang T (Yang, Tao);  Wang LJ (Wang, Li-Jun);  Liu JQ (Liu, Jun-Qi);  Liu FQ (Liu, Feng-Qi);  Ye XL (Ye, Xiao-Ling);  Xu B (Xu, Bo);  Wang ZG (Wang, Zhan-Guo)
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Metalorganic chemical vapor deposition growth of InAs/GaSb type II superlattices with controllable AsxSb1-x interfaces 期刊论文
Nanoscale Research Letters, 2012, 卷号: 7, 页码: 160
Authors:  Li, Li-Gong;  Liu, Shu-Man;  Luo, Shuai;  Yang, Tao;  Wang, Li-Jun;  Liu, Feng-Qi;  Ye, Xiao-Ling;  Xu, Bo;  Wang, Zhan-Guo
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Photoluminescence properties of Al-rich AlXGa1-XN grown on AlN/sapphire template by MOCVD 期刊论文
Physica Status Solidi (C) Current Topics in Solid State Physics, 2012, 卷号: 9, 期号: 3-4, 页码: 733-736
Authors:  Zeng, Jianping;  Yan, Jianchang;  Wang, Junxi;  Cong, Peipei;  Li, Jinmin;  Sun, Shuaishuai;  Tao, Ye
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Effect of Interface Bond Type on the Structure of InAs/GaSb Superlattices Grown by Metalorganic Chemical Vapor Deposition 期刊论文
CHINESE PHYSICS LETTERS, 2011, 卷号: 28, 期号: 11, 页码: 116802
Authors:  Li LG (Li Li-Gong);  Liu SM (Liu Shu-Man);  Luo S (Luo Shuai);  Yang T (Yang Tao);  Wang LJ (Wang Li-Jun);  Liu FQ (Liu Feng-Qi);  Ye XL (Ye Xiao-Ling);  Xu B (Xu Bo);  Wang ZG (Wang Zhan-Guo)
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Si nanopillar arrays with nanocrystals produced by template-induced growth at room temperature 期刊论文
CHINESE PHYSICS B, 2011, 卷号: 20, 期号: 11, 页码: 116103
Authors:  Bai AQ (Bai An-Qi);  Zheng J (Zheng Jun);  Tao YL (Tao Ye-Liao);  Zuo YH (Zuo Yu-Hua);  Xue CL (Xue Chun-Lai);  Cheng BW (Cheng Bu-Wen);  Wang QM (Wang Qi-Ming)
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硅基高晶体质量InAsSb平面纳米线的生长方法 专利
专利类型: 发明, 公开日期: 2016-09-12
Inventors:  杨涛;  杜文娜;  杨晓光;  王小耶;  季祥海;  王占国
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直接在Si衬底上自催化生长InAsSb纳米线的方法 专利
专利类型: 发明, 公开日期: 2014-07-23
Inventors:  杜文娜;  杨晓光;  王小耶;  杨涛;  王占国
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硅衬底上生长纳米线的衬底处理方法 专利
专利类型: 发明, 公开日期: 2014-05-14
Inventors:  杨涛;  王小耶
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