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282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates 期刊论文
Applied Physics Letters, 2013, 卷号: 102, 期号: 24, 页码: 1113
Authors:  Peng Dong, Jianchang Yan, Junxi Wang, Yun Zhang, Chong Geng, Tongbo Wei, Peipei Cong, Yiyun Zhang, Jianping Zeng, Yingdong Tian, Lili Sun, Qingfeng Yan, Jinmin Li, Shunfei Fan, Zhixin Qin
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Temperature-dependent emission shift and carrier dynamics in deep ultraviolet AlGaN/AlGaN quantum wells 期刊论文
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2013, 卷号: 7, 期号: 4, 页码: 297-300
Authors:  Zeng, Jianping;  Li, Wei;  Yan, Jianchang;  Wang, Junxi;  Cong, Peipei;  Li, Jinmin;  Wang, Weiying;  Jin, Peng;  Wang, Zhanguo
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Photoluminescence properties of Al-rich AlXGa1-XN grown on AlN/sapphire template by MOCVD 期刊论文
Physica Status Solidi (C) Current Topics in Solid State Physics, 2012, 卷号: 9, 期号: 3-4, 页码: 733-736
Authors:  Zeng, Jianping;  Yan, Jianchang;  Wang, Junxi;  Cong, Peipei;  Li, Jinmin;  Sun, Shuaishuai;  Tao, Ye
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Effects of doping on the crystalline quality and composition distribution in InGaN/GaN structure grown by MOCVD 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2007, 卷号: 298 Sp.Iss.SI, 期号: 0, 页码: 235-238
Authors:  Ran JX (Ran Junxue);  Wang XL (Wang Xiaoliang);  Hu GX (Hu Guoxin);  Li JP (Li Jianping);  Wang BZ (Wang Baozhu);  Xiao HL (Xiao Hongling);  Wang JX (Wang Junxi);  Zeng YP (Zeng Yiping);  Li JM (Li Jinmin);  Wang ZG (Wang Zhanguo);  Wang, XL, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: xlwang@red.semi.ac.cn
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Doping  
Effects of buffer layers on the stress and morphology of GaN epilayer grown on Si substrate by MOCVD 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2007, 卷号: 298 Sp.Iss.SI, 期号: 0, 页码: 281-283
Authors:  Liu Z (Liu Zhe);  Wang XL (Wang Xiaoliang);  Wang JX (Wang Junxi);  Hu GX (Hu Guoxin);  Guo LC (Guo Lunchun);  Li JP (Li Jianping);  Li JM (Li Jinmin);  Zeng YP (Zeng Yiping);  Wang, XL, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: xlwang@red.semi.ac.cn
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Characterization  
Investigation of optical quenching of photoconductivity in high-resistivity GaN epilayer 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2007, 卷号: 298 Sp.Iss.SI, 期号: 0, 页码: 800-803
Authors:  Fang CB (Fang Cebao);  Wang XL (Wang Xiaoliang);  Xiao HL (Xiao Hongling);  Hu GX (Hu Guoxin);  Wang CM (Wang Cuimei);  Wang XY (Wang Xiaoyan);  Li JP (Li Jianping);  Wang JX (Wang Junxi);  Li CJ (Li Chengji);  Zeng YP (Zeng Yiping);  Li JM (Li Jinmin);  Wang ZG (Wang Zanguo);  Wang, XL, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: xlwang@red.semi.ac.cn
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Deep Defect  
X-Band GaN Power HEMTs with Power Density of 2.23W/mm Grown on Sapphire by MOCVD 期刊论文
半导体学报, 2005, 卷号: 26, 期号: 10, 页码: 1865-1870
Authors:  Wang Xiaoliang;  Liu Xinyu;  Hu Guoxin;  Wang Junxi;  Ma Zhiyong;  Wang Cuimei;  Li Jianping;  Ran Junxue;  Zheng Yingkui;  Qian He;  Zeng Yiping;  Li Jinmin
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