SEMI OpenIR  > 中科院半导体材料科学重点实验室
Effect of Interface Bond Type on the Structure of InAs/GaSb Superlattices Grown by Metalorganic Chemical Vapor Deposition
Li LG (Li Li-Gong); Liu SM (Liu Shu-Man); Luo S (Luo Shuai); Yang T (Yang Tao); Wang LJ (Wang Li-Jun); Liu FQ (Liu Feng-Qi); Ye XL (Ye Xiao-Ling); Xu B (Xu Bo); Wang ZG (Wang Zhan-Guo)
2011
Source PublicationCHINESE PHYSICS LETTERS
Volume28Issue:11Pages:116802
Subject Area半导体材料
Date Available2012-02-21
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/22900
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Li LG ,Liu SM ,Luo S ,et al. Effect of Interface Bond Type on the Structure of InAs/GaSb Superlattices Grown by Metalorganic Chemical Vapor Deposition[J]. CHINESE PHYSICS LETTERS,2011,28(11):116802.
APA Li LG .,Liu SM .,Luo S .,Yang T .,Wang LJ .,...&Wang ZG .(2011).Effect of Interface Bond Type on the Structure of InAs/GaSb Superlattices Grown by Metalorganic Chemical Vapor Deposition.CHINESE PHYSICS LETTERS,28(11),116802.
MLA Li LG ,et al."Effect of Interface Bond Type on the Structure of InAs/GaSb Superlattices Grown by Metalorganic Chemical Vapor Deposition".CHINESE PHYSICS LETTERS 28.11(2011):116802.
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