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Photoluminescence spectroscopy and positron annihilation spectroscopy probe of alloying and annealing effects in nonpolar m-plane ZnMgO thin films 期刊论文
APPLIED PHYSICS LETTERS, 2010, 卷号: 96, 期号: 15, 页码: Art. No. 151904
Authors:  Yang AL;  Song HP;  Liang DC;  Wei HY;  Liu XL;  Jin P;  Qin XB;  Yang SY;  Zhu QS;  Wang ZG;  Yang, AL, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: alyang@semi.ac.cn;  xlliu@semi.ac.cn
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Alloying  Annealing  Electrical Conductivity  Excitons  Ii-vi Semiconductors  Magnesium Compounds  Mocvd Coatings  Photoluminescence  Positron Annihilation  Semiconductor Thin Films  Vacancies (Crystal)  Wide Band Gap Semiconductors  Zinc Compounds  Semiconductors  Emission  Origin  Diodes  
Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors 期刊论文
CHINESE PHYSICS B, 2010, 卷号: 19, 期号: 5, 页码: Art. No. 057802
Authors:  Zhao DG (Zhao De-Gang);  Zhang S (Zhang Shuang);  Liu WB (Liu Wen-Bao);  Hao XP (Hao Xiao-Peng);  Jiang DS (Jiang De-Sheng);  Zhu JJ (Zhu Jian-Jun);  Liu ZS (Liu Zong-Shun);  Wang H (Wang Hui);  Zhang SM (Zhang Shu-Ming);  Yang H (Yang Hui);  Wei L (Wei Long);  Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. 电子邮箱地址: dgzhao@red.semi.ac.cn
Adobe PDF(336Kb)  |  Favorite  |  View/Download:1195/317  |  Submit date:2010/05/24
Ga Vacancies  Mocvd  Gan  Schottky Barrier Photodetector  Reverse-bias Leakage  Molecular-beam Epitaxy  P-n-junctions  Positron-annihilation  Diodes  Films  
Evolution of structural defects in SiOx films fabricated by electron cyclotron resonance plasma chemical vapour deposition upon annealing treatment 期刊论文
CHINESE PHYSICS LETTERS, 2008, 卷号: 25, 期号: 3, 页码: 1034-1037
Authors:  Hao, XP;  Wang, BY;  Yu, RS;  Wei, L;  Wang, H;  Zhao, DG;  Hao, WC;  Wei, L, Chinese Acad Sci, Inst High Energy Phys, Key Lab Nucl Anal Tech, Beijing 100049, Peoples R China. 电子邮箱地址: weil@ihep.ac.cn
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Silicon-oxide Films  Positron-annihilation  Porous Silicon  Thin-films  Photoluminescence  Layers  Beam  
Does an enhanced yellow luminescence imply a reduction of electron mobility in n-type GaN? 期刊论文
JOURNAL OF APPLIED PHYSICS, 2007, 卷号: 102, 期号: 11, 页码: Art. No. 113521
Authors:  Zhao, DG;  Jiang, DS;  Zhu, JJ;  Liu, ZS;  Zhang, SM;  Liang, JW;  Yang, H;  Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optelect, PO Box 912, Beijing 100083, Peoples R China. 电子邮箱地址: dgzhao@red.semi.ac.cn
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Chemical-vapor-deposition  Molecular-beam Epitaxy  X-ray-diffraction  Mg-doped Gan  Undoped Gan  Photoluminescence Bands  Threading Dislocations  Positron-annihilation  Growth Stoichiometry  Gallium Nitride  
Tunneling magnetoresistance in devices based on epitaxial NiMnSb with uniaxial anisotropy 期刊论文
JOURNAL OF APPLIED PHYSICS, 2006, 卷号: 99, 期号: 3, 页码: Art.No.036110
Authors:  Liu J;  Girgis E;  Bach P;  Ruster C;  Gould C;  Schmidt G;  Molenkamp LW;  Liu, J, Univ Wurzburg, Inst Phys, D-97074 Wurzburg, Germany. E-mail: georg.schmidt@physik.uni-wuerzburg.de
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Metallic Ferromagnet Nimnsb  Positron-annihilation  Spin-polarization  Films  Junctions  
Role of edge dislocations in enhancing the yellow luminescence of n-type GaN 期刊论文
APPLIED PHYSICS LETTERS, 2006, 卷号: 88, 期号: 24, 页码: Art.No.241917
Authors:  Zhao DG;  Jiang DS;  Zhu JJ;  Liu ZS;  Zhang SM;  Liang JW;  Li X;  Li XY;  Gong HM;  Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. E-mail: dgzhao@red.semi.ac.cn
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Chemical-vapor-deposition  Molecular-beam Epitaxy  X-ray-diffraction  Mg-doped Gan  Undoped Gan  Photoluminescence Bands  Threading Dislocations  Positron-annihilation  Growth Stoichiometry  Gallium Nitride  
Defects in GaSb studied by coincidence Doppler broadening measurements 期刊论文
POSITRON ANNIHILATION, 2004, 卷号: ICPA-13 PROCEEDINGS, 期号: 445-6, 页码: 114-116
Authors:  Hu, WG;  Wang, Z;  Dai, YQ;  Wang, SJ;  Zhao, YW;  Hu, WG, Wuhan Univ, Dept Phys, Wuhan 430072, Peoples R China. 电子邮箱地址: wangz@whu.edu.cn
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Coincidence Doppler Broadening  Defects  Gasb  Positron Annihilation  
Defects in GaSb studied by coincidence Doppler broadening measurements 会议论文
POSITRON ANNIHILATION, ICPA-13, PROCEEDINGS, 445-6, Kyoto, JAPAN, SEP 07-12, 2003
Authors:  Hu WG;  Wang Z;  Dai YQ;  Wang SJ;  Zhao YW;  Hu WG Wuhan Univ Dept Phys Wuhan 430072 Peoples R China. 电子邮箱地址: wangz@whu.edu.cn
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Coincidence Doppler Broadening  Defects  Gasb  Positron Annihilation  
Effects of annealing ambient on the formation of compensation defects in InP 期刊论文
JOURNAL OF APPLIED PHYSICS, 2003, 卷号: 93, 期号: 2, 页码: 930-932
Authors:  Deng AH;  Mascher P;  Zhao YW;  Lin LY;  Deng AH,Sichuan Univ,Dept Appl Phys,Sichuan 610065,Peoples R China.
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Undoped Semiinsulating Inp  Low Fe Content  Positron-lifetime  Phase Epitaxy  Pressure  Vacancy  Indium  Annihilation  Phosphide  Wafers  
Growing process of CdS nanoclusters in zeolite Y studied by positron annihilation 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2001, 卷号: 224, 期号: 3-4, 页码: 274-279
Authors:  Peng H;  Liu SM;  Ma L;  Lin ZJ;  Wang SJ;  Wang SJ,Wuhan Univ,Dept Phys,Wuhan 430072,Peoples R China.
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Growth Models  Nanostructures  Surfaces  Semiconducting Ii-vi Materials  Positron Annihilation  Semiconductor Colloids  Photochemistry  Superclusters  Clusters  Electron