Defects in GaSb studied by coincidence Doppler broadening measurements
Hu WG; Wang Z; Dai YQ; Wang SJ; Zhao YW; Hu WG Wuhan Univ Dept Phys Wuhan 430072 Peoples R China. 电子邮箱地址: wangz@whu.edu.cn
2004
会议名称13th International Conference on Positron Annihilation (ICPA-13)
会议录名称POSITRON ANNIHILATION, ICPA-13, PROCEEDINGS, 445-6
页码114-116
会议日期SEP 07-12, 2003
会议地点Kyoto, JAPAN
出版地LAUBLSRUTISTR 24, CH-8717 STAFA-ZURICH, SWITZERLAND
出版者TRANS TECH PUBLICATIONS LTD
ISSN0255-5476
ISBN0-87849-936-9
部门归属wuhan univ, dept phys, wuhan 430072, peoples r china; chinese acad sci, inst semicond, ctr mat sci, beijing, peoples r china
摘要Undoped, Zn-doped and Te-doped GaSb with different concentrations were investigated by positron lifetime spectroscopy (PAS) and the Doppler broadening technique. Detection sensitivity of the latter technique was improved by using a second Ge-detector for the coincident detection of the second annihilation photon. PAS measurement indicated that there were vacancies in these samples. By combining the Doppler broadening measurements, the native acceptor defects in GaSb were identified to be predominantly Ga vacancy (V-Ga) related defects.
关键词Coincidence Doppler Broadening Defects Gasb Positron Annihilation
学科领域半导体材料
主办者Commemorat Assoc Japan World Exposit (1970).; Res Fdn Mat Sci.; Sci Council Japan.; Phys Soc Japan.; Japan Soc Appl Phys.; Chem Soc Japan.; Japanese Soc Radiat Chem.; Japan Radioisotope Assoc.
收录类别CPCI-S
语种英语
文献类型会议论文
条目标识符http://ir.semi.ac.cn/handle/172111/13605
专题中国科学院半导体研究所(2009年前)
通讯作者Hu WG Wuhan Univ Dept Phys Wuhan 430072 Peoples R China. 电子邮箱地址: wangz@whu.edu.cn
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Hu WG,Wang Z,Dai YQ,et al. Defects in GaSb studied by coincidence Doppler broadening measurements[C]. LAUBLSRUTISTR 24, CH-8717 STAFA-ZURICH, SWITZERLAND:TRANS TECH PUBLICATIONS LTD,2004:114-116.
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