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用MBE外延InAlGaN单晶薄膜的方法 专利
专利类型: 发明, 申请日期: 2008-01-30, 公开日期: 2009-06-04, 2009-06-11
Inventors:  王保柱;  王晓亮;  王晓燕;  王新华;  肖红领;  王军喜;  刘宏新
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以金属为缓冲层在Si(111)上分子束外延GaN及其表征 期刊论文
半导体学报, 2008, 卷号: 29, 期号: 10, 页码: 1998-2002
Authors:  林郭强;  曾一平;  王晓亮;  刘宏新
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在硅衬底上生长无裂纹氮化镓薄膜的方法 专利
专利类型: 发明, 申请日期: 2007-05-23, 公开日期: 2009-06-04, 2009-06-11
Inventors:  刘喆;  李晋闽;  王军喜;  王晓亮;  王启元;  刘宏新;  王俊;  曾一平
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High responsivity ultraviolet photodetector based on crack-free GaN on Si (111) 会议论文
Physica Status Solidi C - Current Topics in Solid State Physics丛书标题: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS, Vancouver, CANADA, AUG 13-17, 2006
Authors:  Wang, XY (Wang, Xiaoyan);  Wang, XL (Wang, Xiaoliang);  Wang, BZ (Wang, Baozhu);  Xiao, HL (Xiao, Hongling);  Liu, HX (Liu, Hongxin);  Wang, JX (Wang, Junxi);  Zeng, YP (Zeng, Yiping);  Li, JM (Li, Jinmin);  Wang, XY, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
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Buffer Layer  Stress  Photodiodes  Reduction  Detectors  Sapphire  Epitaxy  Growth  
蓝宝石衬底上单晶InAlGaN外延膜的RF-MBE生长 期刊论文
半导体学报, 2006, 卷号: 27, 期号: 8, 页码: 1382-1385
Authors:  王保柱;  王晓亮;  王晓燕;  王新华;  郭伦春;  肖红领;  王军喜;  刘宏新;  曾一平;  李晋闽
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一种在硅衬底上生长高质量氮化铝的方法 专利
专利类型: 发明, 申请日期: 2005-12-14, 公开日期: 2009-06-04, 2009-06-11
Inventors:  张南红;  王晓亮;  曾一平;  肖红领;  王军喜;  刘宏新;  李晋闽
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生长高结晶质量氮化铟单晶外延膜的方法 专利
专利类型: 发明, 申请日期: 2005-12-07, 公开日期: 2009-06-04, 2009-06-11
Inventors:  肖红领;  王晓亮;  王军喜;  张南红;  刘宏新;  曾一平
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在复合衬底γ-Al2O3/Si(001)上生长GaN 期刊论文
半导体学报, 2005, 卷号: 26, 期号: 12, 页码: 2378-2384
Authors:  刘喆;  王军喜;  李晋闽;  刘宏新;  王启元;  王俊;  张南红;  肖红领;  王晓亮;  曾一平
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蓝宝石衬底上单晶InN外延膜的RF-MBE生长 期刊论文
半导体学报, 2005, 卷号: 26, 期号: 6, 页码: 1169-1172
Authors:  肖红领;  王晓亮;  张南红;  王军喜;  刘宏新;  韩勤;  曾一平;  李晋闽
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Si衬底和Si-SiO2-Si柔性衬底上的GaN生长 期刊论文
半导体学报, 2004, 卷号: 25, 期号: 6, 页码: 678-681
Authors:  王军喜;  王晓亮;  刘宏新;  胡国新;  李建平;  李晋闽;  曾一平
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