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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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中国科学院半导体研... [12]
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High-mobility Ga-polarity GaN achieved by NH3-MBE
会议论文
GAN AND RELATED ALLOYS-2002, 743, BOSTON, MA, DEC 02-06, 2002
作者:
Wang JX
;
Wang XL
;
Sun DZ
;
Li JM
;
Zeng YP
;
Hu GX
;
Liu HX
;
Lin LY
;
Wang JX Chinese Acad Sci Inst Semicond Mat Ctr POB 912 Beijing 100083 Peoples R China.
Adobe PDF(119Kb)
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  |  
浏览/下载:1701/427
  |  
提交时间:2010/10/29
Molecular-beam Epitaxy
Ion-scattering Spectroscopy
Lattice Polarity
Single-crystals
Films
Polarization
Gan(0001)
Surfaces
Growth
Diodes
Optical characterization of the Ge/Si (001) islands in multilayer structure
会议论文
APOC 2001: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS: OPTOELECTRONICS, MATERIALS, AND DEVICES FOR COMMUNICATIONS, 4580, BEIJING, PEOPLES R CHINA, NOV 12-15, 2001
作者:
Huang CJ
;
Zuo YH
;
Li C
;
Li DZ
;
Cheng BW
;
Luo LP
;
Yu JZ
;
Wang QM
;
Huang CJ Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China.
Adobe PDF(222Kb)
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  |  
浏览/下载:1354/297
  |  
提交时间:2010/10/29
Ge/si Islands
Quantum Dot
Band Alignment
Pl
Si/si1-xgex Quantum-wells
Stranski-krastanov Growth
Ii Band Alignment
Ge Islands
Temperature-dependence
Photoluminescence
Layers
Luminescence
Organization
Mechanism
Effects of annealing time and Si cap layer thickness on the Si/SiGe/Si heterostructures thermal stability
会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:
Gao F
;
Lin YX
;
Huang DD
;
Li JP
;
Sun DZ
;
Kong MY
;
Zeng YP
;
Li JM
;
Lin LY
;
Gao F Chinese Acad Sci Ctr Mat Sci Inst Semicond Beijing 10083 Peoples R China.
Adobe PDF(96Kb)
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浏览/下载:1694/419
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提交时间:2010/11/15
Annealing
Molecular Beam Epitaxy
Germanium Silicon Alloys
Semiconducting Materials
Strain Relaxation
High-quality GaN grown by gas-source MBE
会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:
Wang JX
;
Sun DZ
;
Wang XL
;
Li JM
;
Zeng YP
;
Hou X
;
Lin LY
;
Wang JX Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(103Kb)
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收藏
  |  
浏览/下载:1680/464
  |  
提交时间:2010/11/15
Characterization
Molecular Beam Epitaxy
Gallium Compounds
Nitrides
Piezoelectric Materials
Semiconducting Gallium Compounds
Molecular-beam Epitaxy
Heterostructures
Sapphire
Diodes
In situ annealing during the growth of relaxed SiGe
会议论文
OPTICAL AND INFRARED THIN FILMS, 4094, SAN DIEGO, CA, 36739
作者:
Li DZ
;
Huang CJ
;
Cheng BW
;
Wang HJ
;
Yu Z
;
Zhang CH
;
Yu JZ
;
Wang QM
;
Li DZ Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China.
Adobe PDF(1540Kb)
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浏览/下载:1122/204
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提交时间:2010/10/29
Ultrahigh Vacuum Chemical Vapor Deposition
Sige
Refractive High Energy Electron Diffraction
Tansmission Electron Microscopy
Double Crystal X-ray Diffraction
Mobility 2-dimensional Electron
Critical Thickness
Strained Layers
Ge
Relaxation
Epilayers
Si1-xgex
Gesi/si
Gases
Effect of rapid thermal annealing on the Raman spectrum of Si0.33Ge0.67/Si (100) alloy
会议论文
NONDESTRUCTIVE CHARACTERIZATION OF MATERIALS IX, 497, SYDNEY, AUSTRALIA, JUN 28-JUL 02, 1999
作者:
Liu JP
;
Kong MY
;
Huang DD
;
Li JP
;
Sun DZ
;
Liu JP Chinese Acad Sci Inst Semicond Ctr Mat Sci POB 912 Beijing 100083 Peoples R China.
收藏
  |  
浏览/下载:864/0
  |  
提交时间:2010/10/29
Strain-shift Coefficients
Si1-xgex
Silicon
Phonons
Electrical properties of GaN deposited on nitridated sapphire by molecular beam epitaxy using NH3 cracked on the growing surface
会议论文
JOURNAL OF CRYSTAL GROWTH, 201, CANNES, FRANCE, AUG 31-SEP 04, 1998
作者:
Zhang JP
;
Sun DZ
;
Li XB
;
Wang XL
;
Kong MY
;
Zeng YP
;
Li JM
;
Lin LY
;
Zhang JP Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(127Kb)
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  |  
浏览/下载:1304/307
  |  
提交时间:2010/11/15
Stress
Growth
Strain-induced morphological evolution and preferential interdiffusion in SiGe epitaxial film on Si(100) during high-temperature annealing
会议论文
JOURNAL OF CRYSTAL GROWTH, 201, CANNES, FRANCE, AUG 31-SEP 04, 1998
作者:
Liu JP
;
Kong MY
;
Liu XF
;
Li JP
;
Huang DD
;
Li LX
;
Sun DZ
;
Kong MY Chinese Acad Sci Inst Semicond Ctr Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(265Kb)
  |  
收藏
  |  
浏览/下载:1400/272
  |  
提交时间:2010/11/15
Stranski-krastanow Growth
Quantum Dots
Relaxation
Inas
Influence of crystal perfection on the reverse leakage current of the SiGe Si p-n heterojunction diodes
会议论文
JOURNAL OF CRYSTAL GROWTH, 201, CANNES, FRANCE, AUG 31-SEP 04, 1998
作者:
Liu XF
;
Liu JP
;
Li JP
;
Wang YT
;
Li LY
;
Sun DZ
;
Kong MY
;
Lin LY
;
Liu XF Chinese Acad Sci Inst Semicond Mat Ctr Beijing 100083 Peoples R China.
收藏
  |  
浏览/下载:878/0
  |  
提交时间:2010/11/15
Layers
The SPER and characteristics of Si1-yCy alloys
会议论文
INTEGRATED OPTOELECTRONICS II, 3551, BEIJING, PEOPLES R CHINA, SEP 18-19, 1998
作者:
Yu Z
;
Yu JZ
;
Cheng BW
;
Lei ZL
;
Li DZ
;
Wang QM
;
Liang JW
;
Yu Z Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(211Kb)
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  |  
浏览/下载:1245/206
  |  
提交时间:2010/10/29
Si1-ycy Alloys
Ion implantatIon
Solid Phase Epitaxy Recrystallization