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Low-Temperature Performance of Accumulation-Mode p-Channel Wrap-Gated FinFETs 期刊论文
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2013, 卷号: 13, 期号: 2, 页码: 804-807
Authors:  Zhang, Yanbo;  Du, Yandong;  Chen, Yankun;  Li, Xiaoming;  Yang, Xiang;  Han, Weihua;  Yang, Fuhua
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Low-temperature electron mobility in heavily n-doped junctionless nanowire transistor 期刊论文
Applied Physics Letters, 2013, 卷号: 102, 期号: 22, 页码: 223507
Authors:  Li, Xiaoming;  Han, Weihua;  Wang, Hao;  Ma, Liuhong;  Zhang, Yanbo;  Du, Yandong;  Yang, Fuhua
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Low-Temperature Quantum Transport Characteristics in Single n-ChannelJunctionless Nanowire Transistors 期刊论文
Electron Device Letters, IEEE, 2013, 卷号: 34, 期号: 5, 页码: 581-583
Authors:  Li, Xiaoming;  Han, Weihua;  Ma, Liuhong;  Wang, Hao;  Zhang, Yanbo;  Yang, Fuhua
Adobe PDF(396Kb)  |  Favorite  |  View/Download:635/149  |  Submit date:2014/03/26
Low-Temperature Quantum Transport Characteristics in Single n-Channel Junctionless Nanowire Transistors 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2013, 卷号: 34, 期号: 5, 页码: 581-583
Authors:  Li, Xiaoming;  Han, Weihua;  Ma, Liuhong;  Wang, Hao;  Zhang, Yanbo;  Yang, Fuhua
Adobe PDF(396Kb)  |  Favorite  |  View/Download:935/281  |  Submit date:2013/08/27
锑化物高电子迁移率晶体管的材料与器件研究 学位论文
, 北京: 中国科学院研究生院, 2012
Authors:  李彦波
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Molecular beam epitaxial growth and characterization of GaSb layers on GaAs (0 0 1) substrates 期刊论文
Applied Surface Science, 2012, 卷号: 258, 期号: 17, 页码: 6571-6575
Authors:  Li, Yanbo;  Zhang, Yang;  Zhang, Yuwei;  Wang, Baoqiang;  Zhu, Zhanping;  Zeng, Yiping
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锑化物HEMT器件研究进展 期刊论文
功能材料与器件学报, 2011, 卷号: 17, 期号: 1, 页码: 29-35
Authors:  李彦波;  刘超;  张杨;  曾一平
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Ⅱ-Ⅵ族镉化物材料的MBE生长及器件应用进展 期刊论文
半导体光电, 2011, 卷号: 32, 期号: 1, 页码: 1-5,14
Authors:  赵杰;  刘超;  李彦波;  曾一平
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Electron mobility in modulation-doped AlSb/InAs quantum wells 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 7, 页码: Article no.73703
Authors:  Li YB;  Zhang Y;  Zeng YP;  Zhang, Y, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.;
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Acoustic-phonon-scattering  Low-power Applications  Transport-properties  Interface Roughness  Inas/alsb Hemts  Heterostructures  Inas  Transistors  Gas  Layers  
Optimization of VI/II pressure ratio in ZnTe growth on GaAs(001) by molecular beam epitaxy 期刊论文
APPLIED SURFACE SCIENCE, 2010, 卷号: 256, 期号: 22, 页码: 6881-6886
Authors:  Zhao J (Zhao Jie);  Zeng YP (Zeng Yiping);  Liu C (Liu Chao);  Cui LJ (Cui Lijie);  Li YB (Li Yanbo);  Zhao, J, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, QingHua E Rd, Beijing 100083, Peoples R China. E-mail Address:
Adobe PDF(1068Kb)  |  Favorite  |  View/Download:1100/306  |  Submit date:2010/07/05
Znte  Molecular Beam Epitaxy  Reflection High-energy Electron Diffraction  X-ray Diffraction  Atomic Force Microscopy  Vapor-phase Epitaxy  N-type Znte  Mbe Growth  100 Gaas  Znse  Layers  Surface  Temperature  Substrate  Epilayers