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Low-temperature electron mobility in heavily n-doped junctionless nanowire transistor
Li, Xiaoming; Han, Weihua; Wang, Hao; Ma, Liuhong; Zhang, Yanbo; Du, Yandong; Yang, Fuhua
2013
Source PublicationApplied Physics Letters
Volume102Issue:22Pages:223507
Subject Area微电子学
Indexed ByEI
Language英语
Date Available2014-05-08
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24915
Collection半导体集成技术工程研究中心
Recommended Citation
GB/T 7714
Li, Xiaoming,Han, Weihua,Wang, Hao,et al. Low-temperature electron mobility in heavily n-doped junctionless nanowire transistor[J]. Applied Physics Letters,2013,102(22):223507.
APA Li, Xiaoming.,Han, Weihua.,Wang, Hao.,Ma, Liuhong.,Zhang, Yanbo.,...&Yang, Fuhua.(2013).Low-temperature electron mobility in heavily n-doped junctionless nanowire transistor.Applied Physics Letters,102(22),223507.
MLA Li, Xiaoming,et al."Low-temperature electron mobility in heavily n-doped junctionless nanowire transistor".Applied Physics Letters 102.22(2013):223507.
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