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Low-Temperature Performance of Accumulation-Mode p-Channel Wrap-Gated FinFETs 期刊论文
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2013, 卷号: 13, 期号: 2, 页码: 804-807
Authors:  Zhang, Yanbo;  Du, Yandong;  Chen, Yankun;  Li, Xiaoming;  Yang, Xiang;  Han, Weihua;  Yang, Fuhua
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Low-temperature electron mobility in heavily n-doped junctionless nanowire transistor 期刊论文
Applied Physics Letters, 2013, 卷号: 102, 期号: 22, 页码: 223507
Authors:  Li, Xiaoming;  Han, Weihua;  Wang, Hao;  Ma, Liuhong;  Zhang, Yanbo;  Du, Yandong;  Yang, Fuhua
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飞秒激光光刻技术制备T型栅AiGaN/GaN_HEMT的研究 学位论文
, 北京: 中国科学院研究生院, 2012
Authors:  杜彦东
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Analysis of the ohmic contacts of Ti/Al/Ni/Au to AlGaN/GaN HEMTs by the multi-step annealing process 期刊论文
Journal of Semiconductors, 2012, 卷号: 33, 期号: 6, 页码: 064005
Authors:  Yan, Wei;  Zhang, Renping;  Du, Yandong;  Han, Weihua;  Yang, Fuhua
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Drive current of accumulation-mode p-channel SOI-based wrap-gated Fin-FETs 期刊论文
Journal of Semiconductors, 2011, 卷号: 32, 期号: 9, 页码: 94001
Authors:  Zhang, Yanbo;  Du, Yandong;  Xiong, Ying;  Yang, Xiang;  Han, Weihua;  Yang, Fuhua,;  Han, W.(weihua@semi.ac.cn)
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Carrier Concentration  Electric Fields  Fins(Heat Exchange)  
增强型AlGaN/GaN HEMT器件工艺的研究进展 期刊论文
半导体技术, 2011, 卷号: 36, 期号: 10, 页码: 771-777
Authors:  杜彦东;  韩伟华;  颜伟;  张严波;  熊莹;  张仁平;  杨富华
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SiO2/SiN双层钝化层T型栅AlGaN/GaN HEMT及制作方法 专利
专利类型: 发明, 专利号: CN102437182A, 公开日期: 2012-09-07, 2012-05-02, 2012-09-07
Inventors:  杜彦东;  韩伟华;  颜伟;  张严波;  杨富华
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利用光子束超衍射技术制备半导体T型栅电极的方法 专利
专利类型: 发明, 专利号: CN102157361A, 公开日期: 2012-09-07, 2011-08-17, 2012-09-07
Inventors:  颜伟;  杜彦东;  韩伟华;  杨富华
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半导体晶体管结构及其制造方法 专利
专利类型: 发明, 专利号: CN102280454A, 公开日期: 2012-09-07, 2011-12-14, 2012-09-07
Inventors:  张严波;  韩伟华;  杜彦东;  李小明;  陈艳坤;  杨香;  杨富华
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硅纳米线光栅谐振增强型光电探测器及其制作方法 专利
专利类型: 发明, 专利号: CN102201483A, 公开日期: 2012-09-07, 2011-09-28, 2011-09-28, 2012-09-07
Inventors:  韩伟华;  陈燕坤;  李小明;  张严波;  杜彦东;  杨富华
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