SEMI OpenIR

Browse/Search Results:  1-10 of 27 Help

Selected(0)Clear Items/Page:    Sort:
Desorption and Ripening of Low Density InAs Quantum Dots 期刊论文
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2009, 卷号: 9, 期号: 2, 页码: 844-847
Authors:  Zhan F;  Huang SS;  Niu ZC;  Ni HQ;  Xiong YH;  Fang ZD;  Zhou HY;  Luo Y;  Huang SS Tsinghua Univ Dept Elect Engn State Key Lab Integrated Optoelect Beijing 100084 Peoples R China.
Adobe PDF(2425Kb)  |  Favorite  |  View/Download:932/210  |  Submit date:2010/03/08
Quantum Dots  Desorption  Molecular Beam Epitaxy  
单光子源低密度长波长InAs/GaAs量子点的制备 期刊论文
功能材料与器件学报, 2008, 卷号: 14, 期号: 5, 页码: 915-918
Authors:  方志丹;  崔碧峰;  黄社松;  倪海桥;  邢艳辉;  牛智川
Adobe PDF(488Kb)  |  Favorite  |  View/Download:926/317  |  Submit date:2010/11/23
Fabrication of ultra-low density and long-wavelength emission InAs quantum dots 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2007, 卷号: 301, 期号: 0, 页码: 751-754
Authors:  Huang, SS (Huang, Shesong);  Niu, ZC (Niu, Zhichuan);  Ni, HQ (Ni, Haiqiao);  Xiong, YH (Xiong, Yonghua);  Zhan, F (Zhan, Feng);  Fang, ZD (Fang, Zhidan);  Xia, JB (Xia, Jianbai);  Niu, ZC, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: zcniu@red.semi.ac.cn
Adobe PDF(698Kb)  |  Favorite  |  View/Download:908/309  |  Submit date:2010/03/29
Long Wavelength  
Optimization of GaInNAs(Sb)/GaAs quantum wells at 1.3-1.55 mu m grown by molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2007, 卷号: 301, 期号: 0, 页码: 125-128
Authors:  Ni, HQ (Ni, H. Q.);  Niu, ZC (Niu, Z. C.);  Fang, ZD (Fang, Z. D.);  Huang, SS (Huang, S. S.);  Zhang, SY (Zhang, S. Y.);  Wu, DH (Wu, D. H.);  Shun, Z (Shun, Z.);  Han, Q (Han, Q.);  Wu, RH (Wu, R. H.);  Ni, HQ, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: nihq@red.semi.ac.cn
Adobe PDF(200Kb)  |  Favorite  |  View/Download:935/398  |  Submit date:2010/03/29
Quantum Wells  
1.3微米高密度量子点结构及其制备方法 专利
专利类型: 发明, 申请日期: 2006-06-14, 公开日期: 2009-06-04, 2009-06-11
Inventors:  牛智川;  方志丹;  倪海桥;  韩勤;  龚政;  张石勇;  佟存柱;  彭红玲;  吴东海;  赵欢;  吴荣汉
Adobe PDF(629Kb)  |  Favorite  |  View/Download:1251/227  |  Submit date:2009/06/11
Complex quantum ring structures formed by droplet epitaxy 期刊论文
APPLIED PHYSICS LETTERS, 2006, 卷号: 89, 期号: 3, 页码: Art.No.031921
Authors:  Huang SS (Huang Shesong);  Niu ZC (Niu Zhichuan);  Fang ZD (Fang Zhidan);  Ni HQ (Ni Haiqiao);  Gong Z (Gong Zheng);  Xia JB (Xia Jianbai);  Niu, ZC, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. E-mail: zcniu@semi.ac.cn;  fangzhidan@bjut.edu.cn;  zhenggong@strath.ac.uk
Adobe PDF(377Kb)  |  Favorite  |  View/Download:1055/387  |  Submit date:2010/04/11
Room-temperature  Dots  
Corrugated surfaces formed on GaAs (331)a substrates: The template for laterally ordered InGaAs nanowires 会议论文
International Journal of Nanoscience丛书标题: International Journal of Nanoscience Series, Beijing, PEOPLES R CHINA, NOV 24-27, 2004
Authors:  Miao, ZH (Miao, Zhenhua);  Gong, Z (Gong, Zheng);  Fang, ZD (Fang, Zhidan);  Niu, ZC (Niu, Zhichuan);  Gong, Z, Chinese Acad Sci, Inst Semicond, Natl Lab Superlattice & Microstruct, PO Box 912, Beijing 100083, Peoples R China.
Adobe PDF(378Kb)  |  Favorite  |  View/Download:995/291  |  Submit date:2010/03/29
Atomic Hydrogen  Molecular Beam Epitaxy  Step Arrays  Molecular-beam Epitaxy  Atomic-hydrogen  Vicinal Surface  Quantum Dots  Growth  Temperature  Irradiation  Mechanism  Mbe  
Surface morphology evolution of strained InAs/GaAs(331)a films 会议论文
International Journal of Nanoscience丛书标题: International Journal of Nanoscience Series, Beijing, PEOPLES R CHINA, NOV 24-27, 2004
Authors:  Gong, M (Gong, Meng);  Fang, ZD (Fang, Zhidan);  Miao, ZH (Miao, Zhenhua);  Niu, ZC (Niu, Zhichuan);  Gong, M, Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, PO Box 912, Beijing 100083, Peoples R China.
Adobe PDF(287Kb)  |  Favorite  |  View/Download:946/288  |  Submit date:2010/03/29
Surface Morphology Evolution  Inas Nanostructures  Island-pit Pairs  Molecular-beam Epitaxy  Quantum Dots  Cooperative Nucleation  Heteroepitaxy  Transition  Islands  Growth  
Tuning of emission wavelength of InAs/GaAs quantum dots sandwiched by combination layers 会议论文
International Journal of Nanoscience丛书标题: International Journal of Nanoscience Series, Beijing, PEOPLES R CHINA, NOV 24-27, 2004
Authors:  Fang, ZD (Fang, Zhidan);  Gong, M (Gong, Meng);  Miao, ZH (Miao, Zhenhua);  Niu, ZC (Niu, Zhichuan);  Fang, ZD, Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
Adobe PDF(431Kb)  |  Favorite  |  View/Download:1151/334  |  Submit date:2010/03/29
Quantum Dots  Photoluminescence  Combination Layer  1.3 Mu-m  Lasers  Inalas  
Optical characteristics of InAs quantum dots on GaAs matrix by using various InGaAs structures 期刊论文
JOURNAL OF WUHAN UNIVERSITY OF TECHNOLOGY-MATERIALS SCIENCE EDITION, 2006, 卷号: 21, 期号: 2, 页码: 76-79
Authors:  Kong LM (Kong Lingmin);  Cai JF (Cai Jiafa);  Wu ZY (Wu Zhengyun);  Gong Z (Gong Zheng);  Fang ZD (Fang Zhidan);  Niu ZC (Niu Zhichuan);  Wu, ZY, Xiamen Univ, Dept Phys, Xiamen 361005, Peoples R China. E-mail: konglm0592@yahoo.com;  zhywu@xmu.edu.cn
Adobe PDF(190Kb)  |  Favorite  |  View/Download:1085/373  |  Submit date:2010/04/11
Ingaas Layer  Inas Quantum Dots  Time-resolved Pl Spectra  1.3 Mu-m  Carrier Dynamics  Lasers  Growth  Wavelength  Emission  Islands  Layers  Size