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Evidence of Type-II Band Alignment in III-nitride Semiconductors: Experimental and theoretical investigation for In0.17Al0.83N/GaN heterostructures 期刊论文
SCIENTIFIC REPORTS, 2014, 卷号: 4, 页码: 6521
Authors:  Wang, JM;  Xu, FJ;  Zhang, X;  An, W;  Li, XZ;  Song, J;  Ge, WK;  Tian, GS;  Lu, J;  Wang, XQ;  Tang, N;  Yang, ZJ;  Li, W;  Wang, WY;  Jin, P;  Chen, YH;  Shen, B
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Theoretical model of the polarization Coulomb field scattering in strained AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
JOURNAL OF APPLIED PHYSICS, 2014, 卷号: 116, 期号: 4, 页码: 044507
Authors:  Luan, CB;  Lin, ZJ;  Lv, YJ;  Zhao, JT;  Wang, YT;  Chen, H;  Wang, ZG
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Indium Compositional Homogeneity in In0.17Al0.83N Epilayers Grown by Metal Organic Chemical Vapor Deposition 期刊论文
APPLIED PHYSICS EXPRESS, 2012, 卷号: 5, 期号: 10, 页码: 101002
Authors:  Wang JM (Wang, Jiaming);  Xu FJ (Xu, Fujun);  Huang CC (Huang, Chengcheng);  Xu ZY (Xu, Zhengyu);  Zhang X (Zhang, Xia);  Wang Y (Wang, Yan);  Ge WK (Ge, Weikun);  Wang XQ (Wang, Xinqiang);  Yang ZJ (Yang, Zhijian);  Shen B (Shen, Bo);  Li W (Li, Wei);  Wang WY (Wang, Weiying);  Jin P (Jin, Peng)
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Determination of the series resistance under the Schottky contacts of AlGaN/AlN/GaN Schottky barrier diodes 期刊论文
CHINESE PHYSICS B, 2012, 卷号: 21, 期号: 1, 页码: 17103
Authors:  Cao, ZF;  Lin, ZJ;  Lu, YJ;  Luan, CB;  Yu, YX;  Chen, H;  Wang, ZG
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Influence of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
APPLIED PHYSICS LETTERS, 2012, 卷号: 101, 期号: 11, 页码: 113501
Authors:  Luan CB (Luan, Chongbiao);  Lin ZJ (Lin, Zhaojun);  Lv YJ (Lv, Yuanjie);  Meng LG (Meng, Lingguo);  Yu YX (Yu, Yingxia);  Cao ZF (Cao, Zhifang);  Chen H (Chen, Hong);  Wang ZG (Wang, Zhanguo)
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A simple method of extracting the polarization charge density in the AlGaN/GaN heterostructure from current-voltage and capacitance-voltage characteristics 期刊论文
CHINESE PHYSICS B, 2012, 卷号: 21, 期号: 9, 页码: 097104
Authors:  Lu YJ (Lu Yuan-Jie);  Lin ZJ (Lin Zhao-Jun);  Yu YX (Yu Ying-Xia);  Meng LG (Meng Ling-Guo);  Cao ZF (Cao Zhi-Fang);  Luan CB (Luan Chong-Biao);  Wang ZG (Wang Zhan-Guo)
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Polarization Coulomb field scattering in In0.18Al0.82N/AlN/GaN heterostructure field-effect transistors 期刊论文
JOURNAL OF APPLIED PHYSICS, 2012, 卷号: 112, 期号: 5, 页码: 054513
Authors:  Luan CB (Luan, Chongbiao);  Lin ZJ (Lin, Zhaojun);  Feng ZH (Feng, Zhihong);  Meng LG (Meng, Lingguo);  Lv YJ (Lv, Yuanjie);  Cao ZF (Cao, Zhifang);  Yu YX (Yu, Yingxia);  Wang ZG (Wang, Zhanguo)
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Influence of the ratio of gate length to drain-to-source distance on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
NANOSCALE RESEARCH LETTERS, 2012, 卷号: 7, 页码: 434
Authors:  Lv YJ (Lv, Yuanjie);  Lin ZJ (Lin, Zhaojun);  Meng LG (Meng, Lingguo);  Luan CB (Luan, Chongbiao);  Cao ZF (Cao, Zhifang);  Yu YX (Yu, Yingxia);  Feng ZH (Feng, Zhihong);  Wang ZG (Wang, Zhanguo)
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Evaluating AlGaN/AlN/GaN heterostructure Schottky barrier heights with flat-band voltage from forward current-voltage characteristics 期刊论文
APPLIED PHYSICS LETTERS, 2011, 卷号: 99, 期号: 12, 页码: 123504
Authors:  Lv YJ;  Lin ZJ;  Meng LG;  Yu YX;  Luan CB;  Cao ZF;  Chen H;  Sun BQ;  Wang ZG;  Lin, ZJ (reprint author), Shandong Univ, Sch Phys, Jinan 250100, Peoples R China, linzj@sdu.edu.cn
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Extraction of AlGaN/GaN heterostructure Schottky diode barrier heights from forward current-voltage characteristics 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 7, 页码: Article no.74512
Authors:  Lv YJ;  Lin ZJ;  Corrigan TD;  Zhao JZ;  Cao ZF;  Meng LG;  Luan CB;  Wang ZG;  Chen H;  Lv, YJ, Shandong Univ, Sch Phys, Jinan 250100, Peoples R China. linzj@sdu.edu.cn
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