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Design of prototype high speed CMOS image sensors 期刊论文
Proceedings of the SPIE, 2013, 卷号: 8908, 页码: 89082G
Authors:  Cao, Zhong-xiang;  Zhou, Yang-fan;  Li, Quan-liang;  Qin, Qi;  Wu, Nan-jian
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单载流子光电探测器的高速及高饱和功率的研究 期刊论文
物理学报, 2012, 卷号: 61, 期号: 13, 页码: 138501-1-138501-6
Authors:  张岭梓,左玉华,曹权,薛春来,成步文,张万昌,曹学蕾,王启明
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硅材料中的杂质光伏效应 学位论文
, 北京: 中国科学院研究生院, 2012
Authors:  曹权
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Wavelength-Tunable Si-Based InGaAs Resonant Cavity Enhanced Photodetectors Using Sol-Gel Wafer Bonding Technology 期刊论文
IEEE PHOTONICS TECHNOLOGY LETTERS, 2011, 卷号: 23, 期号: 13, 页码: 881-883
Authors:  Zhang LZ;  Cao Q;  Zuo YH;  Xue CL;  Cheng BW;  Wang QM;  Zhang, LZ, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. zhang.labs@gmail.com;  pobakey@semi.ac.cn;  yhzuo@semi.ac.cn;  clxue@semi.ac.cn;  cbw@semi.ac.cn;  qmwang@semi.ac.cn
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Resonant Cavity Enhanced (Rce) Photodetector  Silicon Photonics  Sol-gel Wafer Bonding  Thermal Tuning  Interfacial Energy  Silicon-wafers  High-speed  Temperature  Photodiodes  Morphology  Power  
Detailed balance limit efficiency of silicon intermediate band solar cells 期刊论文
CHINESE PHYSICS B, 2011, 卷号: 20, 期号: 9, 页码: 097103
Authors:  Cao Q (Cao Quan);  Ma ZH (Ma Zhi-Hua);  Xue CL (Xue Chun-Lai);  Zuo YH (Zuo Yu-Hua);  Wang QM (Wang Qi-Ming)
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Temperature-dependent modulation characteristics for 1.3 mu m InAs/GaAs quantum dot lasers 期刊论文
JOURNAL OF APPLIED PHYSICS, 2010, 卷号: 107, 期号: 1, 页码: Art. No. 013102
Authors:  Xu PF (Xu Peng-Fei);  Yang T (Yang Tao);  Ji HM (Ji Hai-Ming);  Cao YL (Cao Yu-Lian);  Gu;  YX (Gu Yong-Xian);  Liu Y (Liu Yu);  Ma WQ (Ma Wen-Quan);  Wang ZG (Wang Zhan-Guo);  Yang, T, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. E-mail Address: tyang@semi.ac.cn
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Energy States  Optical Modulation  Quantum Dot Lasers  Threshold Current  Well  Gain  
High Characteristic Temperature 1.3 mu m InAs/GaAs Quantum-Dot Lasers Grown by Molecular Beam Epitaxy 期刊论文
CHINESE PHYSICS LETTERS, 2010, 卷号: 27, 期号: 2, 页码: Art. No. 027801
Authors:  Ji HM (Ji Hai-Ming);  Yang T (Yang Tao);  Cao YL (Cao Yu-Lian);  Xu PF (Xu Peng-Fei);  Gu YX (Gu Yong-Xian);  Ma;  WQ (Ma Wen-Quan);  Wang ZG (Wang Zhan-Guo);  Yang, T, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. E-mail Address: tyang@semi.ac.cn
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Threshold Current  Room-temperature  Dependence  Photoluminescence  
Delay of the excited state lasing of 1310 nm InAs/GaAs quantum dot lasers by facet coating 期刊论文
APPLIED PHYSICS LETTERS, 2010, 卷号: 96, 期号: 17, 页码: Art. No. 171101
Authors:  Cao YL (Cao Yu-Lian);  Yang T (Yang Tao);  Xu PF (Xu Peng-Fei);  Ji HM (Ji Hai-Ming);  Gu YX (Gu Yong-Xian);  Wang XD (Wang Xiao-Dong);  Wang Q (Wang Qing);  Ma WQ (Ma Wen-Quan);  Chen LH (Chen Liang-Hui);  Yang, T, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. 电子邮箱地址: tyang@semi.ac.cn
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Excited States  Gallium Arsenide  Iii-v Semiconductors  Indium Compounds  Laser Tuning  Optical Films  Quantum Dot Lasers  Silicon Compounds  Tantalum Compounds  Temperature-dependence  Threshold  Performance  Gain  
Continuous-wave operation of GaN based multi-quantum-well laser diode at room temperature 期刊论文
CHINESE PHYSICS LETTERS, 2008, 卷号: 25, 期号: 4, 页码: 1281-1283
Authors:  Zhang LQ;  Zhang SM;  Yang H;  Cao Q;  Ji L;  Zhu JJ;  Liu ZS;  Zhao DG;  Jiang DS;  Duan LH;  Wang H;  Shi YS;  Liu SY;  Chen LH;  Liang JW;  Zhang, LQ, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: hyang@red.semi.ac.cn
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Influence of GaAsP insertion layers on performance of InGaAsP/InGaP/AlGaAs quantum-well laser 期刊论文
CHINESE PHYSICS LETTERS, 2006, 卷号: 23, 期号: 9, 页码: 2583-2586
Authors:  Cao YL (Cao Yu-Lian);  Lian P (Lian Peng);  Ma WQ (Ma Wen-Quan);  Wang Q (Wang Qing);  Wu XM (Wu Xu-Ming);  He GR (He Guo-Rong);  Li H (Li Hui);  Wang XD (Wang Xiao-Dong);  Song GF (Song Guo-Feng);  Chen LH (Chen Liang-Hui);  Cao, YL, Chinese Acad Sci, Inst Semicond, Lab Nanooptoelect, Beijing 100083, Peoples R China. E-mail: caoyl@semi.ac.cn
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Vapor-phase Epitaxy  Diode-lasers  Interface Characteristics  Growth Sequence  Movpe Growth  Lp-movpe  Heterostructures  Heterojunction  Power  Nm