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The Research Progress of Quantum Dot Lasers and Photodetectors in China 期刊论文
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2011, 卷号: 11, 期号: 11 S1, 页码: 9345-9356
Authors:  Xu PF (Xu Peng-Fei);  Ji HM (Ji Hai-Ming);  Yang T (Yang Tao);  Xu B (Xu Bo);  Ma WQ (Ma Wen-Quan);  Wang ZG (Wang Zhanguo)
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Temperature-dependent modulation characteristics for 1.3 mu m InAs/GaAs quantum dot lasers 期刊论文
JOURNAL OF APPLIED PHYSICS, 2010, 卷号: 107, 期号: 1, 页码: Art. No. 013102
Authors:  Xu PF (Xu Peng-Fei);  Yang T (Yang Tao);  Ji HM (Ji Hai-Ming);  Cao YL (Cao Yu-Lian);  Gu;  YX (Gu Yong-Xian);  Liu Y (Liu Yu);  Ma WQ (Ma Wen-Quan);  Wang ZG (Wang Zhan-Guo);  Yang, T, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. E-mail Address: tyang@semi.ac.cn
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Energy States  Optical Modulation  Quantum Dot Lasers  Threshold Current  Well  Gain  
High Characteristic Temperature 1.3 mu m InAs/GaAs Quantum-Dot Lasers Grown by Molecular Beam Epitaxy 期刊论文
CHINESE PHYSICS LETTERS, 2010, 卷号: 27, 期号: 2, 页码: Art. No. 027801
Authors:  Ji HM (Ji Hai-Ming);  Yang T (Yang Tao);  Cao YL (Cao Yu-Lian);  Xu PF (Xu Peng-Fei);  Gu YX (Gu Yong-Xian);  Ma;  WQ (Ma Wen-Quan);  Wang ZG (Wang Zhan-Guo);  Yang, T, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. E-mail Address: tyang@semi.ac.cn
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Threshold Current  Room-temperature  Dependence  Photoluminescence  
Delay of the excited state lasing of 1310 nm InAs/GaAs quantum dot lasers by facet coating 期刊论文
APPLIED PHYSICS LETTERS, 2010, 卷号: 96, 期号: 17, 页码: Art. No. 171101
Authors:  Cao YL (Cao Yu-Lian);  Yang T (Yang Tao);  Xu PF (Xu Peng-Fei);  Ji HM (Ji Hai-Ming);  Gu YX (Gu Yong-Xian);  Wang XD (Wang Xiao-Dong);  Wang Q (Wang Qing);  Ma WQ (Ma Wen-Quan);  Chen LH (Chen Liang-Hui);  Yang, T, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. 电子邮箱地址: tyang@semi.ac.cn
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Excited States  Gallium Arsenide  Iii-v Semiconductors  Indium Compounds  Laser Tuning  Optical Films  Quantum Dot Lasers  Silicon Compounds  Tantalum Compounds  Temperature-dependence  Threshold  Performance  Gain  
Two-color quantum well infrared photodetector simultaneously working at 10-14 mu m 期刊论文
ACTA PHYSICA SINICA, 2010, 卷号: 59, 期号: 8, 页码: 5720-5723
Authors:  Liu XY (Liu Xiao-Yu);  Ma WQ (Ma Wen-Quan);  Zhang YH (Zhang Yan-Hua);  Huo YH (Huo Yong-Heng);  Chong M (Chong Ming);  Chen LH (Chen Liang-Hui)
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Quantum Well Infrared Photodetector  Two-color  Simultaneous Photoresponse  
On detection wavelength and electron-hole wave function overlap of type II InAs/In-x Ga1-x Sb superlattice infrared photodetector 期刊论文
ACTA PHYSICA SINICA, 2010, 卷号: 59, 期号: 5, 页码: 3099-3106
Authors:  Huang JL (Huang Jian-Liang);  Wei Y (Wei Yang);  Ma WQ (Ma Wen-Quan);  Yang T (Yang Tao);  Chen LH (Chen Liang-Hui);  Wei, Y, Chinese Acad Sci, Inst Semicond, Lab Nanooptoelect, Beijing 100083, Peoples R China. 电子邮箱地址: wqma@semi.ac.cn
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Type Ii Superlattice  
Calculation of energy levels in InGaAs/GaAs quantum dot array 期刊论文
ACTA PHYSICA SINICA, 2007, 卷号: 56, 期号: 9, 页码: 5429-5435
Authors:  Xiao-Jie, Y (Yang Xiao-Jie);  Qing, W (Wang Qing);  Wen-Quan, M (Ma Wen-Quan);  Liang-Hui, C (Chen Liang-Hui);  Xiao-Jie, Y, Chinese Acad Sci, Inst Semicond, Nano Optoelect Lab, Beijing 100083, Peoples R China. 电子邮箱地址: yangxj@semi.ac.cn
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Ingaas  
Influence of GaAsP insertion layers on performance of InGaAsP/InGaP/AlGaAs quantum-well laser 期刊论文
CHINESE PHYSICS LETTERS, 2006, 卷号: 23, 期号: 9, 页码: 2583-2586
Authors:  Cao YL (Cao Yu-Lian);  Lian P (Lian Peng);  Ma WQ (Ma Wen-Quan);  Wang Q (Wang Qing);  Wu XM (Wu Xu-Ming);  He GR (He Guo-Rong);  Li H (Li Hui);  Wang XD (Wang Xiao-Dong);  Song GF (Song Guo-Feng);  Chen LH (Chen Liang-Hui);  Cao, YL, Chinese Acad Sci, Inst Semicond, Lab Nanooptoelect, Beijing 100083, Peoples R China. E-mail: caoyl@semi.ac.cn
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Vapor-phase Epitaxy  Diode-lasers  Interface Characteristics  Growth Sequence  Movpe Growth  Lp-movpe  Heterostructures  Heterojunction  Power  Nm  
InGaAsP/InP PBH 双区共腔双稳激光器的H+轰击掩膜研究 期刊论文
半导体学报, 1993, 卷号: 14, 期号: 9, 页码: 562
Authors:  张权生;  吕卉;  杜云;  马朝花;  吴荣汉;  高洪海;  高文智;  芦秀玲
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两端结构中长波同时响应量子阱红外探测器及其制作方法 专利
专利类型: 发明, 专利号: CN200910081985.4, 公开日期: 2011-08-31
Inventors:  霍永恒;  马文全;  种明;  张艳华;  陈良惠
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