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Interface-driven unusual anomalous Hall effect in Mn x Ga/Pt bilayers 期刊论文
PHYSICAL REVIEW B, 2019, 卷号: 100, 页码: 184410
Authors:  K. K. Meng ;   L. J. Zhu;   Z. H. Jin;   E. K. Liu;   X. P. Zhao;   I. A. Malik;   Z. G. Fu;   Y. Wu;   J. Miao;   X. G. Xu;   J. X. Zhang;   J. H. Zhao;   Y. Jiang
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Thermal diffusion of nitrogen into ZnO film deposited on InN/sapphire substrate by metal organic chemical vapor deposition 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 110, 期号: 11, 页码: 113509
Authors:  Shi K (Shi K.);  Zhang PF (Zhang P. F.);  Wei HY (Wei H. Y.);  Jiao CM (Jiao C. M.);  Jin P (Jin P.);  Liu XL (Liu X. L.);  Yang SY (Yang S. Y.);  Zhu QS (Zhu Q. S.);  Wang ZG (Wang Z. G.)
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The two- to three-dimensional growth transition of InAs/GaAs epitaxy layer studied by reflectance difference spectroscopy 期刊论文
JOURNAL OF APPLIED PHYSICS, 2010, 卷号: 108, 期号: 8, 页码: Art. No. 083513
Authors:  Zhou GY (Zhou G. Y.);  Chen YH (Chen Y. H.);  Tang CG (Tang C. G.);  Liang LY (Liang L. Y.);  Jin P (Jin P.);  Wang ZG (Wang Z. G.);  Zhou, GY, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: yhchen@red.semi.ac.cn
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Quantum-dot System  Island Formation  In-situ  Evolution  Gaas  Photoluminescence  
用正电子研究原生ZnO单晶中的缺陷 期刊论文
武汉大学学报. 理学版, 2008, 卷号: 54, 期号: 3, 页码: 305-308
Authors:  王柱;  柯君玉;  李辉;  庞锦标;  戴益群;  赵有文
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Rapid thermal annealing properties of ZnO films grown using methanol as oxidant 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2007, 卷号: 40, 期号: 19, 页码: 6010-6013
Authors:  Zhang PF (Zhang, P. F.);  Liu XL (Liu, X. L.);  Wei HY (Wei, H. Y.);  Fan HB (Fan, H. B.);  Liang ZM (Liang, Z. M.);  Jin P (Jin, P.);  Yang SY (Yang, S. Y.);  Jiao CM (Jiao, C. M.);  Zhu QS (Zhu, Q. S.);  Wang ZG (Wang, Z. G.);  Zhang, PF, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: zhangpanf@semi.ac.cn;  xlliu@semi.ac.cn
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Chemical-vapor-deposition  
Evolution of InAs/GaAs(001) islands during the two- to three-dimensional growth mode transition in molecular-beam epitaxy 期刊论文
NANOTECHNOLOGY, 2007, 卷号: 18, 期号: 16, 页码: Art.No.165301
Authors:  Wu, J (Wu, J.);  Jin, P (Jin, P.);  Jiao, YH (Jiao, Y. H.);  Lv, XJ (Lv, X. J.);  Wang, ZG (Wang, Z. G.);  Wu, J, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: wuju@red.semi.ac.cn
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Assembled Quantum Dots  
A comparison between contactless electroreflectance and photoreflectance spectra from n-doped GaAs on a semi-insulating GaAs substrate 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2006, 卷号: 21, 期号: 10, 页码: 1467-1471
Authors:  Jin P (Jin Peng);  Pan SH (Pan S. H.);  Li YG (Li Y. G.);  Zhang CZ (Zhang C. Z.);  Wang ZG (Wang Z. G.);  Jin, P, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. E-mail: pengjin@red.semi.ac.cn
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Franz-keldysh Oscillations  Differential Photoreflectance  Modulation Spectroscopy  Fourier Transformation  Interfaces  Surface  
Molecular beam epitaxy InAs dot arrays on InGaAs/GaAs 期刊论文
NANOTECHNOLOGY, 2006, 卷号: 17, 期号: 23, 页码: 5846-5850
Authors:  Jiao YH (Jiao Y. H.);  Wu J (Wu J.);  Xu B (Xu B.);  Jin P (Jin P.);  Hu LJ (Hu L. J.);  Liang LY (Liang L. Y.);  Ren YY (Ren Y. Y.);  Wang ZG (Wang Z. G.);  Jiao, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
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Chemical-vapor-deposition  Field-effect Transistors  Quantum-dots  Self-organization  Islands  Nanostructures  Superlattices  Growth  Surface  Gaas(100)  
MBE InAs quantum dots grown on metamorphic InGaAs for long wavelength emitting 期刊论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2006, 卷号: 35, 期号: 1, 页码: 194-198
Authors:  Jiao YH (Jiao Y. H.);  Wu J (Wu J.);  Xu B (Xu B.);  Jin P (Jin P.);  Hu LJ (Hu L. J.);  Liang LY (Liang L. Y.);  Wang ZG (Wang Z. G.);  Jiao, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: jiaoyuheng@mail.semi.ac.cn
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Metamorphic  Long Wavelength  Quantum Dots  Molecular Beam Epitaxy  Molecular-beam Epitaxy  Chemical-vapor-deposition  1.3 Mu-m  Gaas  Emission  Range  Islands  Arrays  Lasers  
Room-temperature continuous-wave operation of InAs quantum-wire laser on InP(001) substrate 期刊论文
ELECTRONICS LETTERS, 2006, 卷号: 42, 期号: 13, 页码: 757-758
Authors:  Yang XR (Yang X. R.);  Xu B (Xu B.);  Wang ZG (Wang Z. G.);  Jin P (Jin P.);  Liang P (Liang P.);  Hu Y (Hu Y.);  Sun H (Sun H.);  Chen YH (Chen Y. H.);  Liu FL (Liu F. L.);  Yang, XR, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: yangxr@mail.semi.ac.cn
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Dots