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An IO block array in a radiation-hardened SOI SRAM-based FPGA 期刊论文
Journal of Semiconductors, 2012, 卷号: 33, 期号: 1, 页码: 015010
Authors:  Zhao, Yan;  Wu, Lihua;  Han, Xiaowei;  Li, Ming;  Liu, Guizhai;  Zhang, Feng;  Guo, Xufeng;  Zhao, Kai;  Stanley, L. Chen;  Yu, Fang;  Liu, Zhongli;  Li, Yan;  Zhang, Qianli;  Chen, Liang;  Zhang, Guoquan;  Li, Jianzhong;  Yang, Bo;  Gao, Jiantou;  Wang, Jian
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A radiation-hardened SOI-based FPGA 期刊论文
Journal of Semiconductors, 2011, 卷号: 32, 期号: 7, 页码: 75012
Authors:  Han, Xiaowei;  Wu, Lihua;  Zhao, Yan;  Li, Yan;  Zhang, Qianli;  Chen, Liang;  Zhang, Guoquan;  Li, Jianzhong;  Yang, Bo;  Gao, Jiantou;  Wang, Jian;  Li, Ming;  Liu, Guizhai;  Zhang, Feng;  Guo, Xufeng;  Stanley, L. Chen;  Liu, Zhongli;  Yu, Fang;  Zhao, Kai;  Han, X.(xiaowei@semi.ac.cn)
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Field Programmable Gate Arrays(Fpga)  Logic Devices  Software Testing  Static Random Access Storage  
Au-Pt-Ni-p-InP新的低欧姆接触电极 期刊论文
科学通报, 1998, 卷号: 43, 期号: 20, 页码: 2167
Authors:  李秉臣;  彭晔;  李建中
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AlGaAs/GaAs超晶格界面平整度的X射线双晶衍射研究 期刊论文
半导体学报, 1995, 卷号: 16, 期号: 5, 页码: 334
Authors:  庄岩;  王玉田;  李建中
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采用CH4/H2混合气对InP进行反应离子腐蚀的研究 期刊论文
半导体学报, 1991, 卷号: 12, 期号: 4, 页码: 231
Authors:  李建中;  陈纪瑛
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用SF6—N2混合气的反应离子刻蚀制作WSix微米结构 期刊论文
半导体学报, 1990, 卷号: 11, 期号: 5, 页码: 355
Authors:  程美乔;  傅绍云;  李建中
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氩离子在反应离子腐蚀III-V族材料中的应用 期刊论文
半导体学报, 1990, 卷号: 11, 期号: 12, 页码: 937
Authors:  李建中
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