SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
采用CH4/H2混合气对InP进行反应离子腐蚀的研究
李建中; 陈纪瑛
1991
Source Publication半导体学报
Volume12Issue:4Pages:231
metadata_83中科院半导体所
Subject Area半导体化学
Indexed ByCSCD
Language中文
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20331
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
李建中,陈纪瑛. 采用CH4/H2混合气对InP进行反应离子腐蚀的研究[J]. 半导体学报,1991,12(4):231.
APA 李建中,&陈纪瑛.(1991).采用CH4/H2混合气对InP进行反应离子腐蚀的研究.半导体学报,12(4),231.
MLA 李建中,et al."采用CH4/H2混合气对InP进行反应离子腐蚀的研究".半导体学报 12.4(1991):231.
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