SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
氩离子在反应离子腐蚀III-V族材料中的应用
李建中
1990
Source Publication半导体学报
Volume11Issue:12Pages:937
metadata_83中科院半导体所
Subject Area半导体化学
Indexed ByCSCD
Language中文
CSCD IDCSCD:112273
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20505
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
李建中. 氩离子在反应离子腐蚀III-V族材料中的应用[J]. 半导体学报,1990,11(12):937.
APA 李建中.(1990).氩离子在反应离子腐蚀III-V族材料中的应用.半导体学报,11(12),937.
MLA 李建中."氩离子在反应离子腐蚀III-V族材料中的应用".半导体学报 11.12(1990):937.
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