SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Au-Pt-Ni-p-InP新的低欧姆接触电极
李秉臣; 彭晔; 李建中
1998
Source Publication科学通报
Volume43Issue:20Pages:2167
metadata_83中科院半导体所
Subject Area微电子学
Indexed ByCSCD
Language中文
CSCD IDCSCD:449654
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19133
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
李秉臣,彭晔,李建中. Au-Pt-Ni-p-InP新的低欧姆接触电极[J]. 科学通报,1998,43(20):2167.
APA 李秉臣,彭晔,&李建中.(1998).Au-Pt-Ni-p-InP新的低欧姆接触电极.科学通报,43(20),2167.
MLA 李秉臣,et al."Au-Pt-Ni-p-InP新的低欧姆接触电极".科学通报 43.20(1998):2167.
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