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A Novel Nanocone Cluster Microstructure with Anti-reflection and Superhydrophobic Properties for Photovoltaic Devices 期刊论文
NANOSCALE RESEARCH LETTERS, 2018, 卷号: 13, 页码: 332
Authors:  Jing Ma ;   Yuanfei Ai ;   Lei Kang ;   Wen Liu ;   Zhe Ma ;   Peishuai Song ;   Yongqiang Zhao ;   Fuhua Yang ;   Xiaodong Wang
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Reduction of Efficiency Droop and Modification of Polarization Fields of InGaN-Based Green Light-Emitting Diodes via Mg-Doping in the Barriers 期刊论文
Chinese Physics Letters, 2013, 卷号: 30, 期号: 8, 页码: 087101
Authors:  ZHANG Ning, LIU Zhe, SI Zhao, REN Peng, WANG Xiao-Dong, FENG Xiang-Xu, DONG Peng, DU Cheng-Xiao, ZHU Shao-Xin, FU Bing-Lei, LU Hong-Xi, LI Jin-Min, WANG Jun-Xi
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Improvement of the efficiency droop of GaN-LEDs using an AlGaN/GaN superlattice insertion layer 期刊论文
Journal of Semiconductors, 2011, 卷号: 32, 期号: 11, 页码: 114006
Authors:  Ji, Panfeng;  Liu, Naixin;  Wei, Tongbo;  Liu, Zhe;  Lu, Hongxi;  Wang, Junxi;  Li, Jinmin;  Ji, P.(jipanfeng@semi.ac.cn)
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Efficiency  Electrostatic Devices  Electrostatic Discharge  Superlattices  Voltage Control  
Influence of growth conditions on the V-defects in InGaN/GaN MQWs 期刊论文
Journal of Semiconductors, 2011, 卷号: 32, 期号: 10, 页码: 103001
Authors:  Ji, Panfeng;  Liu, Naixin;  Wei, Xuecheng;  Liu, Zhe;  Lu, Hongxi;  Wang, Junxi;  Li, Jinmin;  Ji, P.(jipanfeng@semi.ac.cn)
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Gallium Nitride  Growth Temperature  Semiconductor Quantum Wells  Surface Defects  
Improved performance of UV-LED by p-AlGaN with graded composition 期刊论文
Physica Status Solidi(C) Current Topics in Solid State Physics, 2011, 卷号: 8, 期号: 2, 页码: 461-463
Authors:  Yan, Jianchang;  Wang, Junxi;  Cong, Peipei;  Sun, Lili;  Liu, Naixin;  Liu, Zhe;  Zhao, Chao;  Li, Jinmin;  Yan, J.(yanjc@semi.ac.cn)
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Atomic Force Microscopy  Diffraction  Electroluminescence  Gallium  Metallorganic Chemical Vapor Deposition  Organic Chemicals  Organic Light Emitting Diodes(Oled)  Organometallics  Structure(Composition)  Ultraviolet Radiation  x Ray Diffraction  
一种制备氮化物单晶衬底的氢化物气相外延装置 专利
专利类型: 发明, 申请日期: 2008-06-25, 公开日期: 2009-06-04, 2009-06-11
Inventors:  段瑞飞;  刘喆;  钟兴儒;  魏同波;  马平;  王军喜;  曾一平;  李晋闽
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HVPE气相外延法在c面蓝宝石上选区外延生长GaN及其表征 期刊论文
半导体学报, 2008, 卷号: 29, 期号: 3, 页码: 530-533
Authors:  林郭强;  曾一平;  段瑞飞;  魏同波;  马平;  王军喜;  刘喆;  王晓亮;  李晋闽
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在硅衬底上生长无裂纹氮化镓薄膜的方法 专利
专利类型: 发明, 申请日期: 2007-05-23, 公开日期: 2009-06-04, 2009-06-11
Inventors:  刘喆;  李晋闽;  王军喜;  王晓亮;  王启元;  刘宏新;  王俊;  曾一平
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Effects of buffer layers on the stress and morphology of GaN epilayer grown on Si substrate by MOCVD 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2007, 卷号: 298 Sp.Iss.SI, 期号: 0, 页码: 281-283
Authors:  Liu Z (Liu Zhe);  Wang XL (Wang Xiaoliang);  Wang JX (Wang Junxi);  Hu GX (Hu Guoxin);  Guo LC (Guo Lunchun);  Li JP (Li Jianping);  Li JM (Li Jinmin);  Zeng YP (Zeng Yiping);  Wang, XL, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: xlwang@red.semi.ac.cn
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Characterization  
The influence of AlN/GaN superlattice intermediate layer on the properties of GaN grown on Si(111) substrates 期刊论文
CHINESE PHYSICS, 2007, 卷号: 16, 期号: 5, 页码: 1467-1471
Authors:  Liu Z (Liu Zhe);  Wang XL (Wang Xiao-Liang);  Wang JX (Wang Jun-Xi);  Hu GX (Hu Guo-Xin);  Guo LC (Guo Lun-Chun);  Li JM (Li Jin-Min);  Liu, Z, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China. 电子邮箱地址: liuzhe@red.semi.ac.cn
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Gan