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Structures and optical characteristics of InGaN quantum dots grown by MBE 期刊论文
Xiyou Jinshu Cailiao Yu Gongcheng/Rare Metal Materials and Engineering, 2011, 卷号: 40, 期号: 11, 页码: 2030-2032
Authors:  Wang, Baozhu;  Yan, Cuiying;  Wang, Xiaoliang;  Wang, B.(wangbz@semi.ac.cn)
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Atomic Force Microscopy  Gallium Nitride  Molecular Beam Epitaxy  Optical Materials  Optical Properties  Reflection High Energy Electron Diffraction  Sapphire  
分子束外延生长InGaN量子点及其结构和光学特性 期刊论文
稀有金属材料与工程, 2011, 卷号: 40, 期号: 11, 页码: 2030-2032
Authors:  王保柱;  颜翠英;  王晓亮
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MOCVD生长Al_(0.48)Gao_(0.52)N/Al_(0.54)Ga_(0.36)N多量子阱的结构和光学特性 期刊论文
光电子·激光, 2009, 卷号: 20, 期号: 11, 页码: 1454-1457
Authors:  王保柱;  安胜彪;  文环明;  武瑞红;  王晓君;  王晓亮
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射频分子束外延生长AlInGaN四元合金 期刊论文
无机材料学报, 2009, 卷号: 24, 期号: 3, 页码: 559-562
Authors:  王保柱;  王晓亮
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一种对气体传感器或半导体器件性能进行测试的系统 专利
专利类型: 发明, 申请日期: 2008-03-12, 公开日期: 2009-06-04, 2009-06-11
Inventors:  王晓亮;  王新华;  冯春;  王保柱;  马志勇;  王军喜;  胡国新;  肖红领;  冉军学;  王翠梅
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用MBE外延InAlGaN单晶薄膜的方法 专利
专利类型: 发明, 申请日期: 2008-01-30, 公开日期: 2009-06-04, 2009-06-11
Inventors:  王保柱;  王晓亮;  王晓燕;  王新华;  肖红领;  王军喜;  刘宏新
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AlGaN/GaN背对背肖特基二极管氢气传感器 期刊论文
半导体学报, 2008, 卷号: 29, 期号: 1, 页码: 153-156
Authors:  王新华;  王晓亮;  冯春;  冉军学;  肖红领;  杨翠柏;  王保柱;  王军喜
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Effects of doping on the crystalline quality and composition distribution in InGaN/GaN structure grown by MOCVD 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2007, 卷号: 298 Sp.Iss.SI, 期号: 0, 页码: 235-238
Authors:  Ran JX (Ran Junxue);  Wang XL (Wang Xiaoliang);  Hu GX (Hu Guoxin);  Li JP (Li Jianping);  Wang BZ (Wang Baozhu);  Xiao HL (Xiao Hongling);  Wang JX (Wang Junxi);  Zeng YP (Zeng Yiping);  Li JM (Li Jinmin);  Wang ZG (Wang Zhanguo);  Wang, XL, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: xlwang@red.semi.ac.cn
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Doping  
The influence of internal electric fields on the transition energy of InGaN/gaN quantum well 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2007, 卷号: 298 Sp.Iss.SI, 期号: 0, 页码: 522-526
Authors:  Guo LC (Guo Lunchun);  Wang XL (Wang Xiaoliang);  Xiao HL (Xiao Hongling);  Wang BZ (Wang Baozhu);  Wang, XL, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: xlwang@red.semi.ac.cn
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Computer Simulation  
Characteristics of high Al content AlxGa1-xN grown by metalorganic chemical vapor deposition 期刊论文
MICROELECTRONICS JOURNAL, 2007, 卷号: 38, 期号: 8-9, 页码: 838-841
Authors:  Wang XY (Wang, Xiaoyan);  Wang XL (Wang, Xiaoliang);  Hu GX (Hu, Guoxin);  Wang BZ (Wang, Baozhu);  Ma ZY (Ma, Zhiyong);  Xiao HL (Xiao, Hongling);  Wang CM (Wang, Cuimei);  Ran JX (Ran, Junxue);  Li JP (Li, Jianping);  Wang, XY, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: xywang@mail.semi.ac.cn
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Alxga1-xn