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Surface acoustic wave velocity and electromechanical coupling coefficient of GaN grown on (0001) sapphire by metal-organic vapour phase epitaxy 期刊论文
CHINESE PHYSICS LETTERS, 2001, 卷号: 18, 期号: 10, 页码: 1418-1419
Authors:  Chen Z;  Lu DC;  Wang XH;  Liu XL;  Han PD;  Yuan HR;  Wang D;  Wang ZG;  He ST;  Li HL;  Yan L;  Chen XY;  Chen Z,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,Beijing 100083,Peoples R China.
Adobe PDF(237Kb)  |  Favorite  |  View/Download:1304/414  |  Submit date:2010/08/12
Thin-films  Deposition  Diodes  
Polarity dependence of hexagonal GaN films on two opposite c faces of Al2O3 substrate 期刊论文
APPLIED PHYSICS LETTERS, 2001, 卷号: 78, 期号: 25, 页码: 3974-3976
Authors:  Han PD;  Wang ZG;  Duan XF;  Zhang Z;  Han PD,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(364Kb)  |  Favorite  |  View/Download:902/270  |  Submit date:2010/08/12
Molecular-beam Epitaxy  Surface Polarity  Single-crystals  Buffer Layer  Grown Gan  Deposition  Morphology  Quality  Zno  
Indium doping effect on GaN in the initial growth stage 期刊论文
JOURNAL OF ELECTRONIC MATERIALS, 2001, 卷号: 30, 期号: 8, 页码: 977-979
Authors:  Yuan HR;  Lu DC;  Liu XL;  Chen Z;  Wang XH;  Wang D;  Han PD;  Yuan HR,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(209Kb)  |  Favorite  |  View/Download:933/327  |  Submit date:2010/08/12
Gan  Indium Doping  Initial Growth Stage  Morphology  Optical Transmission  Photoluminescence  Vapor-phase Epitaxy  Buffer Layer  Films  Sapphire  Deposition